Velocity overshoot explained

Velocity overshoot is a physical effect resulting in transit times for charge carriers between terminals that are smaller than the time required for emission of an optical phonon.^{[1] [2]} The velocity therefore exceeds the saturation velocity up to three times, which leads to faster field-effect transistor or bipolar transistor switching. The effect is noticeable in the ordinary field-effect transistor for the gates shorter than 100 nm.^[3]

Ballistic collection transistor

The device intentionally designed to benefit from the velocity overshoot is called ballistic collection transistor^[4] (not to be mistaken with the ballistic deflection transistor).

See also

• Ballistic conduction

Notes and References

1. Jyegal. Jang. Velocity overshoot decay mechanisms in compound semiconductor field-effect transistors with a submicron characteristic length. AIP Advances. June 2015. 5. 6. 067118. 10.1063/1.4922332. 2015AIPA....5f7118J. free.
2. Tan. Michael Loong Peng. Arora. Vijay K.. Saad. Ismail. Ahmadi. Mohammad Taghi. Razali. Ismail. The drain velocity overshoot in an 80 nm metal–oxide–semiconductor field-effect transistor. Journal of Applied Physics. May 2009. 105. 7. 074503–074503–7. 10.1063/1.3091278. 9 March 2018. 2009JAP...105g4503T. free.
3. SINITSKY. D.. ASSADERAGHI. F.. ORSHANSKY. M.. BOKOR. J.. HU. C.. VELOCITY OVERSHOOT OF ELECTRONS AND HOLES IN Si INVERSION LAYERS. Solid-State Electronics. 1997. 41. 8. 1119–1125. 10.1016/S0038-1101(97)00031-2 . 1997SSEle..41.1119S . 10.1.1.133.2927.
4. Book: Chang. M F. Ishibashi. T. Current Trends In Heterojunction Bipolar Transistors. World Scientific Publishing Co. Pte.. 978-981-02-2097-6. 126–129. 1996.