Stanene Explained

Stanene^{[1] [2] [3]} is a topological insulator, which may display dissipationless currents at its edges near room temperature. It is composed of tin atoms arranged in a single layer, in a manner similar to graphene.^[4] Stanene got its name by combining stannum (the Latin name for tin) with the suffix -ene used by graphene.^[5] Research is ongoing in Germany and China, as well as at laboratories at Stanford and UCLA.^[6]

The addition of fluorine atoms to the tin lattice could extend the critical temperature up to 100 °C.^[7] This would make it practical for use in integrated circuits to make smaller, faster and more energy efficient computers.

See also

• Graphene
• Silicene
• Boron

Stannenes (Similar name to Stanene)

• Stannane (similar name as Stanene, too)
• Semiconductors
• Topological insulator
• Superconductivity
• Superconductors

External links

• News: Could Atomically Thin Tin Transform Electronics? . Charles Q. . Choi . December 4, 2013 . Scientific American.
• News: Stanene May Be Better Than Graphene . 3 December 2013 . R. Colin . Johnson . EE Times.
• News: OHM MY GOD! Move over graphene, here comes '100% PERFECT' stanene . 4 December 2013 . Rik . Myslewski . The Register.
• Web site: Tin-based stanene could conduct electricity with 100 percent efficiency . gizmag . 2013-12-01 . 2013-12-05.
• Web site: Quantum Transport for future Nano-CMOS Applications : TFETs and 2D topological insulators . William . Vandenberghe . University of Texas at Dallas . 2013-10-25 . 2014-01-03.

Notes and References

1. Web site: Will 2-D tin be the next super material? . DOE/SLAC National Accelerator Laboratory . . 2013-11-21 . 2014-01-10.
2. Garcia. J. C.. de Lima. D. B.. Assali. L. V. C.. Justo. J. F.. Group IV Graphene- and Graphane-Like Nanosheets. J. Phys. Chem. C. 2011. 115. 13242. 10.1021/jp203657w. 1204.2875.
3. Web site: Will 2-D tin be the next super material? . . 21 November 2013 . 2014-01-10.
4. Xu . Yong . Yan . Binghai . Zhang . Hai-Jun . Wang . Jing . Xu . Gang . Tang . Peizhe . Duan . Wenhui . Zhang . Shou-Cheng . 2013-09-24 . Large-Gap Quantum Spin Hall Insulators in Tin Films . Physical Review Letters . en . 111 . 13 . 136804 . 10.1103/PhysRevLett.111.136804 . 24116803 . 0031-9007. 1306.3008 . 11310025 .
5. News: Ritu . Singh . Tin could be the next super material for computer chips . . November 24, 2013 .
6. News: Designing the Next Wave of Computer Chips . January 9, 2014 . Markoff . John . . January 10, 2014.
7. Will 2-D Tin be the Next Super Material? . SLAC National Accelerator Laboratory . Stanford University . November 21, 2013 .