Ballistic collection transistor explained

The ballistic collection transistor is the bipolar transistor exhibiting a ballistic conduction resulting in significant velocity overshoot.^[1] Initial demonstration of ballistic conduction in gallium arsenide was done in 1985 by IBM researchers.^[2] The amplifier with 40 GHz bandwidth based on heterojunction bipolar transistor gallium arsenide technology implementing ballistic collection transistors was developed in 1994 by Nippon Telegraph and Telephone researchers.^[3]

See also

• Ballistic deflection transistor

Notes and References

1. Book: Chang. M F. Ishibashi. T. Current Trends In Heterojunction Bipolar Transistors. World Scientific Publishing Co. Pte.. 978-981-02-2097-6. 126–129. 1996.
2. Nathan. M. I.. Heiblum. M.. A gallium arsenide ballistic transistor?. IEEE Spectrum. February 1986. 23. 2. 45–47. 10.1109/MSPEC.1986.6371000. 7718790.
3. Ishibashi. T.. Yamauchi. Y.. Sano. E.. Nakajima. H.. Matsuoka. Y.. Ballistic Collection Transistors and Their Applications. International Journal of High Speed Electronics and Systems. September 1994. 5. 3. 349. 10.1142/S0129156494000152.