Suzhou Oriental Semiconductor Explained

Suzhou Oriental Semiconductor Co., Ltd, abbreviated as Oriental Semiconductor, was founded in 2008, located in SIP, Suzhou, China.[1] It invented the world's first semi-floating gate transistor (SFGT) with Fudan University in Shanghai.[2] The related research paper was published on Science on August 9, 2013.[3]

See also

Notes and References

  1. News: 吴秋华. zh:创意到创业“天使”来搭桥. http://www.sipac.gov.cn/sipnews/jwhg/2009yqdt/200907/t20090725_49766.htm. 2013-08-13. 苏州日报. 2009-07-25. Chinese.
  2. News: Bob. Yirka. Researchers speed up transistors by embedding tunneling field-effect transistor. 13 August 2013. Phys.org. 9 August 2013.
  3. 10.1126/science.1240961. A Semi-Floating Gate Transistor for Low-Voltage Ultrafast Memory and Sensing Operation. 2013. Wang. P.-F.. Lin. X.. Liu. L.. Sun. Q.-Q.. Zhou. P.. Liu. X.-Y.. Liu. W.. Gong. Y.. Zhang. D. W.. Science. 341. 6146. 640–3. 23929978. 2013Sci...341..640W . 206550093 .

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