Static induction transistor explained

The static induction transistor (SIT) is a type of field-effect transistor (FET) capable of high-speed and high-power operation, with low distortion and low noise.[1] It is a vertical structure device with short multichannel. The device was originally known as a VFET, with V being short for vertical.[2] Being a vertical device, the SIT structure offers advantages in obtaining higher breakdown voltages than a conventional FET. For the SIT, the breakdown voltage is not limited by the surface breakdown between gate and drain, allowing it to operate at a very high current and voltage. The SIT has a current-voltage characteristic similar to a vacuum tube triode and it was therefore used in high-end audio products, including power amplifiers from Sony in the second half of the 1970s and Yamaha from 1973-1980. The Sony n-channel SIT had the model number 2SK82 with its p-channel complement named 2SJ28.

Characteristics

A SIT has:

History

The SIT was invented by Japanese engineers Jun-ichi Nishizawa and Y. Watanabe in 1950.[3]

See also

Notes and References

  1. Nishizawa . Jun-ichi . December 15, 1974 . Field-effect transistor versus analog transistor (static induction transistor) . IEEE Transactions on Electron Devices . 22 . 4 . 185–197. 10.1109/T-ED.1975.18103 . 37015648 .
  2. Web site: Pass . Nelson . 2013 . The Sony VFET Amplifier 40 Year Commemorative . August 17, 2022 . First Watt.
  3. Book: High Temperature Electronics. F. Patrick McCluskey. Thomas Podlesak. Richard Grzybowski. CRC Press. 1996. 82. 0-8493-9623-9.