| Simon Sze | |
| Native Name: | 施敏 |
| Birth Date: | 1936 3, df=y |
| Birth Place: | Nanjing, Jiangsu, China |
| Citizenship: | Taiwan United States |
| Nationality: | Taiwanese American |
| Fields: | Electronic engineering |
| Workplaces: | National Yang Ming Chiao Tung University |
| Alma Mater: | National Taiwan University University of Washington Stanford University |
| Known For: | Floating-gate MOSFET |
| Awards: | J. J. Ebers Award IEEE Celebrated Member Future Science Prize |
Simon Min Sze, or Shi Min (; 21 March 1936 – 6 November 2023), was a Taiwanese-American electrical engineer. He is best known for inventing the floating-gate MOSFET with Korean electrical engineer Dawon Kahng in 1967.
Simon Min Sze was born in Nanjing, Jiangsu, and grew up in Taiwan. After graduating from the National Taiwan University in 1957, he received a master's degree from the University of Washington in 1960 and a doctorate from Stanford University in 1963.
Sze worked for Bell Labs until 1990, after which he returned to Taiwan and joined the faculty of National Chiao Tung University.[1] He is well known for his work in semiconductor physics and technology, including his 1967 invention (with Dawon Kahng) of the floating-gate transistor,[2] now widely used in non-volatile semiconductor memory devices. He wrote and edited many books, including Physics of Semiconductor Devices, one of the most-cited texts in its field.
Simon Sze died on 6 November 2023, at the age of 87.[3]