Sandip Tiwari Explained

Sandip Tiwari is an Indian-born electrical engineer and applied physicist. He is the Charles N. Mellowes Professor of Engineering at Cornell University. His previous roles were Director of National Nanotechnology Users Network, Director of the National Nanotechnology Infrastructure Network, and research scientist at IBM T. J. Watson Research Center. He is best known for his pioneer research in the fields of SiGe transistor and nanocrystal memory.

Early life and education

Sandip Tiwari was born in Ahmedabad, India, received his BTech from Indian Institute of Technology, Kanpur in 1976. He received his M.Eng. at Rensselaer Polytechnic Institute and PhD at Cornell University in 1980.

Work and academic career

His early research career was at IBM's Research Division until 1999. During this period, he did the early work on compound semiconductor transistors and co-developed the first SiGe transistor.^{[1] [2]} He also pioneered various quantum and nanoscale devices, such as the nanocrystal memory.^[3] The first demonstration of SiGe transistor was honored as IEEE International Electron Devices Meeting (IEDM) Top Industry Innovation of 1987. His work on nanocrystal memory was one of the 50 most-cited papers in the history of Applied Physics Letters in 2013.^[4]

At Cornell University, his Nanoscale ElectroScience Research Group^{[5] [6]} focused on adaptive approaches for low power design,^[7] three-dimensional integration,^{[8] [9]} inexact computing,^[10] and Bayesian implementations^{[11] [12]}

Selected awards and honors

• IEEE Cledo Brunetti Award, 2007^[13]
• IIT Kanpur Distinguished Alumni Award, 2003^[14]
• International Symposium on Compound Semiconductors (ISCS) Young Scientist Award, 1991^[15]
• Founding Editor-in-Chief of IEEE Transactions on Nanotechnology, 2002^{[16] [17]}
• Guest Editor of Proceedings of the IEEE, 2015^[18]
• Fellow of American Physical Society, 1998^[19]
• Life Fellow of IEEE, 1994^[20]

Selected publications

Books

• S. Tiwari, Quantum, Statistical and Information Mechanics: A Unified Introduction, Electroscience series, Vol. 1, Oxford University Press,
• S. Tiwari, Device Physics: Fundamentals of Electronics and Optoelectronics, Electroscience series, Vol. 2, Oxford University Press,, (2022)
• S. Tiwari, Semiconductor Physics: Principles, Theory and Nanoscale, Electroscience series, Vol. 3, Oxford University Press,, (2020)
• S. Tiwari, Nanoscale Device Physics: Science and Engineering Fundamentals, Electroscience series, Vol. 4, Oxford University Press, (2017)
• S. Tiwari, Compound Semiconductor Device Physics, Academic Press, Inc., (1992) and Elsevier, (1992); Updated edition available as Open Text from group website

Papers

• S. Tiwari, Implications of Scales in Processing of Information, Invited Paper, in Proceedings of the IEEE, vol. 103, no. 8, 1250-1273 (2015)^[21]
• A silicon nanocrystals based memory . Sandip . Tiwari . Farhan . Rana . Hussein . Hanafi . Allan . Hartstein . Emmanuel F. . Crabbé . Kevin . Chan . March 4, 1996 . Applied Physics Letters . 68 . 10 . 1377–1379 . 10.1063/1.116085. 1996ApPhL..68.1377T . ^[22]
• A new effect at high currents in heterostructure bipolar transistors . S. . Tiwari . March 15, 1988 . IEEE Electron Device Letters . 9 . 3 . 142–144 . IEEE Xplore . 10.1109/55.2069. 1988IEDL....9..142T . 39623450 . ^[23]

Notes and References

1. S.S. Iyer, G.L. Patton, S.S. Delage, S. Tiwari, J.M.C. Stork, "Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy", International Electron Devices Meeting (1987).
2. G.L. Patton, S.S. Iyer, S.L. Delage, S. Tiwari and J.M.C. Stork, “Silicon-Germanium Base Heterojunction Bipolar Transistors by Molecular Beam Epitaxy,” IEEE Electron Device Letters, EDL-9, No. 4, p. 165 (1988)
3. S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E. Crabbe and K. Chan, “A Silicon Nano-Crystals Based Memory,” Applied Physics Letters, 68, p.1377, 4 Mar. (1996)
4. Web site: Celebrating 50 Years of Applied Physics Letters. Numse.nagoya-u.ac.jp. 17 July 2022.
5. Web site: Sandip Tiwari | Cornell Engineering. Engineering.cornell.edu.
6. Web site: Nanoscale ElectroScience Research Group, ECE Cornell. electroscience.ece.cornell.edu.
7. J. Y. Kim, P. Solomon and S. Tiwari, “Adaptive Circuit Design Using Independently Biased Back-Gated Double-Gate MOSFETS,” IEEE Circuits and Systems I, 59 (4), Apr.., 806-819(2012)
8. L. Xue, C. C. Liu, H.-S. Kim, S (K) Kim, and S. Tiwari, “Three-Dimensional Integration: Technology, Use, and Issues for Mixed-Signal Applications,” IEEE Transactions on Electron Devices, 50, No. 3, 601-609(2003)
9. C. C. Liu, I. Ganusov, M. Burtscher, and S. Tiwari, “Bridging the Processor-Memory Performance Gap with 3D IC Technology,” IEEE Design and Test of Computers, Vol. 22, Nov., 556-564(2005)
10. J. Y. Kim and S. Tiwari, “Inexact Computing using Probabilistic Circuits: Ultra Low-Power Digital Processing”, ACM Journal of Emerging Technologies, Vol. 10, No. 2, Article 16, February (2014)
11. S. Tiwari and D. Querlioz, “On the physical underpinnings of the unusual effectiveness of probabilistic and neural computation,” Invited paper, Tech. Dig. of IEEE Int’l Conf. on Rebooting Computing, 1--4(2017)
12. Web site: On the Physical Underpinnings of the Unusual Effectiveness of Probabilistic and Neural Computation - IEEE Rebooting Computing 2017. IEEE.
13. Web site: IEEE CLEDO BRUNETTI AWARD : Recipients. https://web.archive.org/web/20211216193824/https://www.ieee.org/content/dam/ieee-org/ieee/web/org/about/awards/recipients/brunetti-rl.pdf. dead. December 16, 2021. Ieee.org. 17 July 2022.
14. Web site: Past DAA Awardees. Iitkalumni.org.
15. Web site: ISCS Young Scientist Award. Csw2018.org.
16. Introduction and information on editorial board. S.. Tiwari. March 15, 2002. IEEE Transactions on Nanotechnology. 1. 1. 1–3. IEEE Xplore. 10.1109/TNANO.2002.1005420. 2002ITNan...1....1T .
17. Web site: Sandip Tiwari. July 8, 2022. Ethw.org.
18. Memories in the Future of Information Processing. Sandip. Tiwari. August 15, 2015. Proceedings of the IEEE. 103. 8. 1247–1249. 10.1109/JPROC.2015.2448912. free.
19. Web site: APS Fellow Archive. Aps.org.
20. Web site: IEEE Fellows Directory - Member Profile. IEEE.
21. Implications of Scales in Processing of Information. Sandip. Tiwari. August 15, 2015. Proceedings of the IEEE. 103. 8. 1250–1273. IEEE Xplore. 10.1109/JPROC.2015.2448936. 12464832 .
22. A silicon nanocrystals based memory . Sandip . Tiwari . Farhan . Rana . Hussein . Hanafi . Allan . Hartstein . Emmanuel F. . Crabbé . Kevin . Chan . March 4, 1996 . Applied Physics Letters . 68 . 10 . 1377–1379 . 10.1063/1.116085. 1996ApPhL..68.1377T .
23. A new effect at high currents in heterostructure bipolar transistors . S. . Tiwari . March 15, 1988 . IEEE Electron Device Letters . 9 . 3 . 142–144 . IEEE Xplore . 10.1109/55.2069. 1988IEDL....9..142T . 39623450 .