List of fellows of IEEE Electron Devices Society explained

The Fellow grade of membership is the highest level of membership, and cannot be applied for directly by the member – instead the candidate must be nominated by others. This grade of membership is conferred by the IEEE Board of Directors in recognition of a high level of demonstrated extraordinary accomplishment.[1]

YearFellowCitation
1968 For leadership and contributions in the field of microelectronic and integrated circuitry
1968 James Biard For outstand contributions in the field of optoelectronics
1970 For the invention of the drift transistor and other semiconductor devices
1971 Richard Anderson For contributions to semiconductors and to engineering education
1972 George Haddad For contributions to solid-state and quantum electronic devices and engineering education
1972 Martin Lepselter For contributions to the advancement of transistor and integrated circuit arts
1974 Marvin White For contributions to the theory and development of solid-state electronic devices, especially memory transistors and charge-coupled imaging arrays
1975 Lewis Terman For contributions to the design and development of semiconductor computer memory and logic circuitry
1977 J Zemel For contributions to solid-state electronics and the development of IV- VI compound semiconductors for infrared photoconductive applications
1978 David Barbe For contributions to the theory, understanding, and development of charge-coupled devices.
1978 John Osepchuk For contributions to microwave technology and to microwave safety.
1979 James Goell For technical contributions and leadership in the fields of optical fibers, integrated optical circuits, and millimeter waveguides
1979 For leadership in the development of ion implantation technology and its application to semiconductor device fabrication
1981 A Ballato For contributions to the theory of piezoelectric crystals and frequency control.
1981 Robert G. Meyer For contributions to analysis and design of high-frequency amplifiers
1982 Fred Blum For leadership in and contributions to the development of high-speed electronic and optoelectronic devices using III-V compounds
1982 William Holton For technical leadership in semiconductor research and development
1982 Simon Middelhoek For contributions to the theory of magnetic thin films and to magnetic and semiconductor technologies and for leadership in engineering education
1982 Bruce Wooley For contributions to the design of integrated circuits for communications systems
1983 For contributions to the development of power semiconductor devices
1983 C Berglund For contributions to metal–oxide–semiconductor interface physics and devices
1983 Richard Eden For contributions to the development of high speed gallium arsenide integrated circuits and III-V alloy photodetectors.
1983 For contributions to the theory and technology of silicon solar cells and transistors
1983 H Troy Nagle For contributions to industrial electronics, data acquisition, and control instrumentation.
1983 Takuo Sugano For contributions to semiconductor technology and devices and to engineering education.
1984 H Casey For contributions to III-V compounds in understanding emission based on the basic optical and impurity behavior
1984 For contributions to computer-aided modeling of silicon devices and fabrication processes
1984 For pioneering theoretical predictions of negative resistance effects due to photoelectrons in gallium arsenide
1985 Michael Adler For contributions to CAD modeling of power semiconductor devices
1985 Arthur Foyt For contributions to ion implantation techniques for semiconductor device fabrication.
1985 Rajinder Khosla For contributions to solid-state imaging, and for leadership in microelectronics
1985 James McGarrity For contributions to the understanding of the physical mechanisms producing radiation damage in MOS devices
1985 For contributions to understanding silicon fabrication processes, device physics, and high-voltage integrated circuits
1986 For contributions to the study of carrier transport in semiconductors and the physics of submicron semiconductor devices.
1986 For contributions to the study of radiation effects in microelectronics
1986 Richard Jaeger For contributions to devices technology for high-performance analog and digital computer systems.
1986 For innovation and leadership in the application of charge-coupled devices for imaging, memory, and signal processing
1986 Kensall Wise For leadership in the field of integrated solid-state sensors and engineering education
1986 H Yu For leadership and contributions to advanced technology for VLSI circuits
1987 P Daniel Dapkus For development of the metalorganic chemical vapor deposition process for the growth of III-V compound semiconductor heterostructures
1987 John Hauser For contributions to the understanding of carrier transport in semiconductors and to the development of cascade solar cells.
1987 Tak Ning For contributions to understanding hot-electron effects on MOSFET devices, and advances in bipolar technology
1987 Ca Salama For contributions to the development of power semiconductor devices and the design of integrated circuits
1988 For contributions to solid-state sensors and to the education in solid-state electronics
1988 Robert Bierig For leadership in the research of GaAs device and MMIC technology
1988 For contributions to compound semiconductor materials and devices
1988 Lawrence Kazmerski For contributions to photovoltaic device technology and to electronic materials and device characterization
1989 Louis Parrillo For contributions to CMOS and bipolar integrated circuits
1989 For contributions to the development of high-speed devices and integrated circuits
1989 Pallab Bhattacharya For contributions to the synthesis and characterization of III-V compounds and heterostructures and their application to electronic and optical devices
1989 Raymond Boxman For advances in vacuum arc theory and its applications
1989 Madhu Gupta For contributions to the characterization and modeling of noise in high-frequency semiconductor devices and microwave integrated circuits
1989 Robert Hartman For contributions to the reliability of semiconductor lasers for optical-fiber communication systems
1989 John Kassakian For contributions to education and research in power electronics
1989 Krishna Pande For contributions to III-V semiconductor materials and device technology, particularly for advancing the indium-phosphide, metal-insulator-semiconductor field-effect-transistor technology
1989 For contributions to metallization and interconnects for VLSI.
1989 Rudy Van De Plassche For contributions to the design of analog integrated circuits
1989 E Vittoz For contributions to the development of micropower integrated circuits.
1990 Harold Fetterman For contributions in extending optical technologies into submillimeter and millimeter wave regions
1990 H Jory For technical leadership in the development of gyrotrons
1990 John Owens For contributions to the understanding and application of magnetostatic waves in the microwave frequency bands
1990 Dimitri Antoniadis For contributions to the fabrication process modeling and simulation and to field-effect quantum transport devices
1990 Shojiro Asai For contributions to advancing semiconductor device technology.
1990 C Bajorek For leadership in the development and manufacture of magnetic data storage and high-speed computer switching devices
1990 Joe Campbell For contributions to semiconductor photo detectors for lightwave communication.
1990 J Donnelly For development of icon implantation techniques and their application to semiconductor photonic devices
1990 Richard Fair For contributions to the understanding of dopant diffusion in silicon, computer modeling of silicon processes, and developments in electron devices
1990 Randy Geiger For contributions to discrete and integrated analog circuit design
1990 For technical contributions to and leadership in the development of computer-aided design of very-large-scale integrated (VLSI) circuits and systems
1990 David Myers For pioneering the development of ion beam modification of strained-layer superlattice and quantum-well compound-semiconductor materials for novel electronic and optoelectronic devices
1990 William Seidler For contributions to research in electromagnetic pulse effects
1990 Gerald Stringfellow For development and understanding of the organometallic vapor phase epitaxy process for III-V semiconductor devices
1990 Denny Tang For contributions to the design and scaling of high-speed silicon bipolar devices
1991 John Bean For contributions to silicon molecular-beam epitaxy
1991 Nathan Bluzer For contributions to infrared image sensors and heterojunction diode detectors
1991 Gerald Borsuk For technical leadership in solid-state and vacuum electronic devices and for contributions to the development of microelectronic photo detectors for optical signal processing
1991 Gailon Brehm For contributions to microwave circuit design and semiconductor processing of GaAs monolithic microwave integrated circuits
1991 E Cohen For leadership in the advancement of microwave and millimeter-wave monolithic integrated circuits
1991 Peter Cottrell For the development of finite-element simulations for MOS and bipolar transistors and for the measurement and modeling of hot-electron effects in MOS devices
1991 Philip Hower For contributions to the understanding and development of power semiconductor devices
1991 Renuka Jindal For contributions to the field of solid-state devices noise theory and practice
1991 Theodore Kamins For contributions to materials, process, design, and education in semiconductor electronics
1991 Mark Kushner For contributions to the fundamental understanding of low-temperature plasmas
1991 Robert Leheny For contributions to the integrated of optical and electronic devices exploiting the advantages of InP materials for telecommunications applications
1991 Nicky Lu For contributions to semiconductor memory design and technology
1991 Ajeet Rohatgi For theoretical and experimental contributions to the design and fabrication of high-efficiency solar cells
1991 George Sai-halasz For contributions to device miniaturization and novel device concepts
1991 Andrzej Strojwas For contributions to statistically based computer-aided manufacturing of integrated circuits
1991 Orlin Trapp For contributions in industrial training in the fields of semiconductor reliability and failure analysis
1992 Bryan Ackland For contributions to the design of custom integrated circuits for signal processing systems
1992 For contributions to semiconductor lasers through innovative epitaxial growth techniques and device designs
1992 Sergio Cova For contributions to the instrumentation of nuclear electronics, in particular, the conception and demonstration of silicon single-photon detectors
1992 For contributions to the development of implanted GaAs and InGaAs millimeter-wave MESFET transistors
1992 Chihiro Hamaguchi For contributions to the understanding of hot-electron effects in semiconductors and the development of modulation spectroscopy
1992 Amr Mohsen
1992 Hisashi Shichijo For contributions to semiconductor memory technology
1992 Michael Stroscio For contributions to the understanding of quantum and relativistic phenomena in solid-state and laser-produced plasma
1992 For contributions to semiconductor optical device physics.
1993 David Blackburn For contributions to the understanding and characterization of the electrothermal properties and related failure mechanisms of power semiconductor devices
1993 James Cooper For time-of-flight studies of high-field transport at the silicon/silicon dioxide interface and demonstration of long-term charge storage in wide-band gap semiconductors
1993 Gilbert Declerck For leadership and contributions to MOS device physics, CCD technology, and VLSI processing techniques
1993 Wilbur Johnston For contributions to optoelectronic materials and device technology
1993 Dimitrios Pavlidis For contributions to the design and technology of heterojunction transistors and monolithic microwave integrated circuits
1993 For pioneering work in numerical analysis of semiconductor devices and their fabrication processes
1993 Stephen Senturia For contributions to the application of microfabrication technology to microsensors and microacoustors, and to the characterization of microelectronic materials
1993 Paul Solomon For contributions to the theory of the scaling of semiconductor devices
1993 Richard True For contributions to a unified theory of electron-beam transport in high-power microwave systems
1994 Gordon Day For technical contributions and leadership in lightwave measurement and optical fiber sensors
1994 Richard Ziolkowski For contributions to the theory of localized waves and their realization in pulse-driven arrays and for contributions to computational electromagnetics.
1994 For contributions to the reliability of microwave power devices
1994 For contribution to synthesis algorithms for the design of electronic circuits and systems
1994 Lawrence Dworsky For contributions to piezoelectric and transmission line resonators and band pass filters for telecommunications applications
1994 Ronald Gutmann For contributions in microwave semiconductor technology
1994 For contributions to the development of high-resolution dry etching processes in compound semiconductors
1994 James C Hwang For contributions to development of molecular beam epitaxy manufacturing and heterostructure devices and materials
1994 For contributions to heterostructure devices physics and simulation
1994 Martin Peckerar For contributions to and leadership in X-ray and microlithography
1994 James Spratt For contributions to the design and fabrication of radiation-hardened integrated circuits, and advances in semiconductor device technology
1994 Robert Swartz For contributions to the design of high-speed integrated circuits for optical communication systems.
1994 Richard Temkin For leadership in the development and application of millimeter-wave and infrared coherent sources
1994 Wen Wang For contributions to compound semiconductor devices through innovative crystal growth
1994 Peter Zory For contributions to the development and understanding of semiconductor and gas lasers
1995 Tiao-yuan Huang For invention and demonstration of fully overlapped lightly doped-drain MOS transistors
1995 For contributions to the understanding and development of high power semiconductor devices.
1995 Chih-yuan Lu For contributions to semiconductor technology, and for leadership in the growth of the Taiwan integrated circuit industry
1995 Tso-ping Ma For contributions to the understanding of oxide semiconductor interface and hot carrier effects
1995 Seiki Ogura
1995 John Pierro For contributions to solid-state microwave low noise amplifiers, and integrated circuit developments
1995 Willy Sansen For contributions to the systematic design of analog integrated circuits
1995 For leadership and contributions to the design and development of microwave and millimeter-wave devices and circuits
1996 Harry Charles For leadership in electronics packaging technology for space, marine and biomedical electronic systems
1996 For contributions to physics of semiconductor devices used in three-dimensional integrated circuits, and low temperature silicon-germanium epitaxy using non-thermally assisted chemical vapor deposition.
1996 David Carlson For contributions to the discovery of methods of preparing hydrogenated amorphous silicon thin films
1996 Joseph Crowley For contributions to education and practice in electrostatic processes, and for fundamental contributions to electrohydrodynamics.
1996 For contributions to the understanding of electronic transport in ultra small devices
1996 J Michael Golio For contributions to the characterization, parameter extraction, and modeling of microwave transistors
1996 For seminal contributions to microfabrication technologies
1996 Hiroyoshi Komiya For contributions to the development and operation of a fully automated semiconductor manufacturing line
1996 Jean P Leburton For contributions to nonlinear electronic transport and size quantization in semiconductor quantum wells, quantum wires, and quantum dots, and the theory of the index of refraction in superlattices
1996 Alan Lewis For contributions to advanced complementary metal oxide semiconductor devices physics and circuit design for large area microelectronics and very large scale integrated.
1996 Ephraim Suhir For contributions to the application of mechanical and reliability engineering to physical design and analysis of microelectronic and fiber optic systems
1996 Toru Toyabe For contributions to numerical device modeling and physics of metal–oxide–semiconductor devices
1997 Herbert Bennett For contributions to modeling heavy doping and transport physics in semiconductors
1997 Howard Kalter For contributions to the development of DRAM.
1997 Larry Carley For contributions to the design o analog integrated circuits and to computer-aided analog design
1997 Andrzej Filipkowski For contributions to engineering education
1997 For contributions to the field of electronic devices and materials
1997 Joseph Giachino For contributions to micro mechanical and microelectro-mechanical control systems
1997 Steven Hillenius For contributions to the field of solid-state technology and its applications to integrated circuits
1997 Kazuhiko Honjo For contributions to the development of gallium-arsenide integrated circuits
1997 Hiroshi Iwai For contributions to ultra-small geometry CMOS BiCMOS devices.
1997 Mitsumasa Koyanagi For the invention of the stacked capacitor DRAM cell
1997 Hisham Massoud For contributions the understanding of silicon oxidation kinetics, ultrathin gate dielectrics, and the Si-SiO2 interface.
1997 Richard Snyder For contributions to the development of high power miniature stopband filters and extremely wideband bandpass filters for microwave applications
1997 W Trybula For contributions in developing and advancing electronics manufacturing technology.
1997 Osamu Wada For his contributions to III-V semiconductor Optoelectronic Integrated Circuit (OEIC)
1997 Cheng Wen For contributions to the invention and the development of copolar waveguide based microwave integrated circuit techniques
1998 Mark Law For contributions to integrated circuits process modeling and simulation
1998 Asad Madni For contributions to the design and development of instrumentation for electronic warfare systems
1998 For contributions and technical leadership in the development and commercialization of photovoltaic solar cells.
1998 Richard Chapman For the development of HgCdTe imaging devices and contributions to CMOS technology
1998 Young-kai Chen For contributions to ultra-short pulse generation using semiconductor lasers, integrated laser-modulators, and high frequency InPHBATs
1998 Michael Driver For contributions to broadband gallium aresenide power circuits.
1998 Tadayoshi Enomoto For contributions to the development of integrated circuits multimedia
1998 For contributions to image sensors and on-chip image processing
1998 Barry Gilbert For development of improved electronic packaging for high performance gallium arsenide integrated circuits.
1998 Richard Kiehl For contributions to heterostructure field-effect transistors and circuits
1998 For leadership in development and manufacturing of III-V electronic materials and devices and their application to military and commercial systems
1998 Carlton Osburn For contributions to silicon technology including self-aligned silicides, dielectric breakdown, and hot electron phenomena
1998 Mark Pinto For contributions to computer-aided design of electronic devices.
1998 M Ayman Shibib For contributions to the devices physics of heavy doping effects and the development of high voltage integrated circuits for telecommunications switching systems
1999 David Lambeth For scientific, educational and professional contributions in the fields of magnetism, data storage systems, and electronic devices
1999 Christopher Silva For contributions in the application of nonlinear circuits and systems theory to communications signal processing.
1999 Giorgio Baccarani For contributions to the scaled silicon device theory.
1999 James Dayton For contributions to the design of microwave devices
1999 Dan Goebel For advancements in plasma sources and technology for pulsed-power switches and microwave sources
1999 Yue Kuo For contributions to thin-film transistor technology and processes.
1999 Michael Melloch For contributions to silicon carbide device technology
1999 Tohru Nakamura For contributions to the development of high-speed bipolar integrated circuits
1999 Heiner Ryssel For introduction of ion implantation technology into the German Semiconductor Industry
1999 Nihal Sinnadurai For contributions to the field of cost effective, reliable microelectronics packaging
1999 Andrew Steckl For contributions to focused ion beam implantation and semiconductor device fabrication
1999 Dwight Streit For contributions to the development and manufacturing of heterojunction materials and devices
1999 Cary Yang For contributions to microelectronic education and the understanding of interfacial properties of silicon-based devices
1999 Ian Young For contributions to microprocessor circuit implementation and technology development
2000 Peter Asbeck For development of heterostructure bipolar transistors and applications
2000 E Fred Schubert For contributions to semiconductor doping and resonant-cavity devices
2000 Bogdan Wilamowski For contributions to industrial electronics and static induction devices
2000 For contributions to EUV optical lithography and deep-submicron MOSFETs
2000 Leonard Brillson For contributions to the understanding and control of semiconductor interfaces and electrical contacts by atomic-scale techniques
2000 Caio Ferreira For contributions to the development of switched reluctance motors and generators applied to advanced electric aircraft
2000 Tor Fjeldly For contributions to semiconductor device modeling and the development of AIM spice
2000 Robert KolbasFor contributions to understanding and development of quantum well heterostructure lasers and light emitters.
2000 John Haig Marsh For contributions to development of integrated optics based on semiconductor quantum well devices
2000 Masatoshi Migitaka For contributions to research and development of silicon high temperature integrated circuits
2000 Arto Nurmikko For contributions to laser science and optoelectronics devices
2000 Gregory Nusinovich For contributions to the theory of gyrotron oscillators and amplifiers and cyclotron autoresonance masers
2000 David Pulfrey For contributions to the modeling of heterojunction bipolar semiconductor devices
2000 Ronald Schrimpf For contributions to the understanding and the modeling of physical mechanisms governing the response of semiconductor devices to radiation exposure
2000 Yuan-chen Sun For contributions to advanced CMOS technology
2000 Naoki Yokoyama For contributions to the development of self-aligned gallium arsenide MESFET integrated circuits.
2001 Edward Rezek For contributions to GaAs and InP monolithic microwave integrated circuits and optoelectronic devices
2001 Richard Ahrenkiel For contributions to measurement of minority carrier lifetimes in semiconductor materials
2001 Barry Burke For contributions to the technology development of charge-coupled devices for imaging and signal processing
2001 Ih-chin Chen For leadership in the development of advanced CMOS technologies
2001 Sorin Cristoloveanu For contributions to Silicon-on-Insulator device physics, technology, and characterization
2001 Sang Hoo Dhong For contribution to high speed processor and memory chip design
2001 Samir El-ghazaly For contributions to the analysis and simulations of microwave devices and circuits.
2001 Cesar Gonzales For contributions to MPEG encoding algorithms and leadership in their use.
2001 Aditya Gupta For contributions to the advancement of microwave monolithic integrated circuit technology and leadership in the development of manufacturable processes
2001 For pioneering work on, and development of, solid-state imagers.
2001 Wei Hwang For contributions to high density cell technology and high speed Dynamic Random Access Memory design
2001 For contributions to III-V compound semiconductor heterostructure materials and devices
2001 Chin Lee For pioneering research in fluxless bonding technology and contributions to thermal design tools for electronic devices and packages.
2001 Baruch Levush For leadership in the development of theoretical and computational models of free electron radiation sources
2001 Kenji Nishi For contributions to semiconductor process and device modeling and the development of software for their simulation
2001 Jon Orloff For contributions to Focussed Ion Beam Technology
2001 Stephen Pearto For development of advanced semiconductor processing techniques and their application to compound semiconductor devices
2001 John Przybysz For contributions in the development and application of Josephson digital circuits to electronic systems, especially radars, communication satellites and data switching networks
2001 Muhammad Rashid For leadership in power electronics education and contributions to the analysis and design methodologies of solid-state power converters
2001 Krishna Shenai For contributions to the understanding, development and application of power semiconductor devices and circuits
2001 Ritu Shrivastava For contributions to high performance CMOS memory technology and product development
2001 James Sturm For contributions to novel silicon-based semiconductor devices and large-area electronics
2001 Yang Yuan Wang For leadership in China's semiconductor research and education
2002 Ming Wu For contributions to optical micro-electro-mechanical systems and high-speed optoelectronics
2002 Narain Arora For contributions to the development of MOSFET compact models for circuit simulation
2002 Joachim Burghartz For contributions to integrated high-speed and radio-frequency silicon devices and components
2002 Keh-yung Chen For contribution to semiconductor heterostructure materials and devices using molecular beam epitaxy
2002 Nico De Rooij For contributions to microelectrical/mechanical systems and technology transfer to the marketplace
2002 Evangelos Eleftheriou For contributions to equalization and coding, and for noise-predictive maximum likelihood detection in magnetic recording.
2002 J. Haslett For contributions to high temperature instrumentation and noise in solid-state electronics
2002 Chennupati Jagadish For contributions to III-V compound semiconductor optoelectronic device integration
2002 Ralph James For contributions to and leadership in the development of wide band-gap compound semiconductor devices used for detecting and imaging X- and gamma-ray radiation
2002 Allan Johnston For contributions to the understanding of space radiation effects in optoelectronics
2002 For contributions to the development of high-performance 1.55 um monolithically integrated photoreceiver for optical communication
2002 Lawrence Pileggi For contributions to simulation and modeling of integrated circuits
2002 Wolfgang Porod For contributions to circuit concepts and architectures for nanoelectronics
2002 Rajendra Singh For contributions to and technical leadership in the materials processing and manufacturing of semiconductor devices
2002 Manfred Thumm For contributions to the development and application of gyrotron oscillators, oversized microwave mode converters and transmission line components
2002 Toshiaki Tsuchiya For contributions to the understanding of the reliability physics of MOS devices and the development of hot-carrier-immune CMOS technologies
2002 Charles Tu For contributions to molecular beam epitaxy of novel III-V semiconductors
2002 Jan Van Der Spiegel For contributions in biologically motivated sensors and information processing systems
2002 Toshiaki Yachi For contributions to power semiconductor and micro-magnetic devices.
2003 Jamal Deen For contributions to modeling, noise, and parameter extraction in silicon transistors and high speed photodetectors
2003 David Frank For contributions to solid-state devices and ultra-small CMOS devices.
2003 William Gallagher For contributions to the development of oxide-barrier tunnel junctions for superconducting and magnetic device applications
2003 David Harame For contributions to the development of SiGe Heterojunction Bipolar Transistor and BiCMOS technologies
2003 Nan Jokerst For contributions to the integration and packaging of optoelectronic devices for the realization of optical interconnections and interfaces.
2003 Hoi-sing Kwok For pioneering research in liquid crystal display technology
2003 Burn Lin For contributions to lithography theory, tooling, masks, and fabrication technology
2003 Tadashi Nishimura For leadership in the development of advanced CMOS devices and process technologies
2003 Umberto Ravaioli For contributions to Monte Carlo simulation of electron devices
2003 Mark Rodwell For contributions to high speed electron devices and integrated circuits
2004 Stephen Goodnick For contributions to carrier transport fundamentals and semiconductor devices
2004 Gary Bronner For contributions to dynamic random access memory technology
2004 Constantin Bulucea For contributions to transistor engineering in the area of power electronics
2004 Casimer De Cusatis For contributions to fiber optic data communication systems
2004 Robert Eklund For leadership in the development and manufacturing of sub-micron CMOS technologies
2004 Hiromu Fujioka For contributions to electron beam testing of semiconductor devices and circuits
2004 Erik Heijne For contributions to semiconductor detector systems and radiation tolerant detector readout electronics
2004 Shuji Ikeda For contributions to the development and manufacturing of static random access memory
2004 Colin Mcandrew For contributions to compact and statistical modeling of semiconductor devices
2004 Sawaki Nobuhiko For contributions to the development of group III-nitride semiconductor materials and devices
2004 Hiroshi Nozawa For contributions to nonvolatile semiconductor memories
2004 Mikael Ostling For contributions to semiconductor device technology and education
2004 Jerzy Ruzyllo For contributions to ultrathin oxidation in microelectronic manufacturing
2004 Victor Ryzhii For contributions to the development of quantum well infrared photodetectors and quantum dot infrared photodetectors.
2004 David Scott For contributions to CMOS and BICMOS technology and circuits
2004 Douglas Verret For leadership in the commercialization of bipolar and BiCMOS technologies
2004 Shin-tson Wu For contributions to liquid crystal displays and tunable photonic devices
2005 Jason C Woo For contributions to nanoscale silicon on insulator and bulk metal oxide semiconductor device physics and technology
2005 Donald Wunsch For contributions to hardware implementations of reinforcement and unsupervised learning
2005 Supriyo Bandyopadhyay For contributions to device applications of nanostructures.
2005 Robert Baumann For contributions to the understanding of the reliability impact of terrestrial radiation mechanisms in commercial electronics
2005 Duane Boning For contributions to modeling and control in semiconductor manufacturing
2005 Clifton Fonstad For leadership in compound semiconductor heterostructure devices.
2005 William Frensley For contributions to nanometer-scale quantum semiconductor devices
2005 Guido Groeseneken For his contributions to the physical understanding and the modeling of reliability of metal oxide semiconductor field effect transistors
2005 George Heiter For contributions to microwave circuits, including linear amplifiers and space diversity combiners
2005 Tadao Ishibashi For contributions to high-speed and optoelectronic semiconductor devices
2005 Noble Johnson For contributions to the control of impurities in semiconductors
2005 Masaaki Kuzuhara For contributions to Group III-V microwave power devices.
2005 Joy Laskar For contributions to the modeling and development of high frequency communication modules
2005 Kartikeya Mayaram For contributions to coupled device and circuit simulation
2005 Deirdre Meldrum For contributions to genome automation
2005 Hisayo Momose For contributions to ultra-thin gate oxide metal oxide semiconductor fields effect transistors
2005 Yutaka Ohmori For contributions to the development of organic and semiconductor light emitting materials and devices
2005 Shinji Okazaki For contributions to the resolution enhancement technology in optical and electron-beam lithography.
2005 Fang-zheng Peng For contributions to multilevel power converter topology, control, and applications.
2005 Mark Rodder For contributions to deep sub-micron complementary metal oxide semiconductor technology
2005 Enrico Sangiorgi For contributions to the modeling and characterization of hot carriers and non stationary transport effects in small silicon devices
2005 Phillip Smith For contributions to microwave high electron mobility transistors
2005 Juzer Vasi For leadership in microelectronics education
2005 For leadership in developing document systems
2005 For leadership in electronic device reliability
2005 Kazuo Yano For contributions to nanostructured-silicon devices and circuits and advanced CMOS logic
2006 Andreas Andreou For contributions to energy efficient sensory microsystems
2006 William Chen For contributions to packaging and assembly technology
2006 Steve Chung For contributions to reliability in ultra-thin-oxide complementary metal oxide semiconductor (CMOS) devices
2006 Hector De Los Santos For contributions to radio frequency (RF) and microwave micro electromechanical systems (MEMS) devices and applications
2006 Simon Deleonibus For contributions to nanoscaled complementary metal oxide semiconductor (CMOS) devices technology.
2006 Martin Giles For contributions to technology computer aided design (TCAD) modeling of processes and devices.
2006 Hideki Hayashi For contributions to and leadership in compound semiconductor device technologies
2006 Larry Hornbeck For invention, development, and applications of the Digital Micromirror Device
2006 Qin Huang For contributions to emitter turn-off thyristor technology and its applications
2006 Gary May For contributions to semiconductor manufacturing and engineering education
2006 David Seiler For leadership in the development of critical metrology and measurement science at the micro and nano levels
2006 Usha Varshney For technical leadership in sensor technologies and systems
2006 Katsuyoshi Washio For contributions to high-speed silicon and silicon germanium bipolar/Bi complementary metal oxide semiconductors (CMOS) device and circuit technologies
2006 Burnell West For contributions to high-performance automatic test equipment
2006Paul Franzon For contributions to chip-package codesign.
2007 Giovanni Ghione For contributions to numerical physics-based modelling of passive and active integrated microwave components
2007 Victor Chen For contributions to time-frequency analysis for radar imaging and target feature extraction
2007 Kwong-kit Choi For contributions to quantum well infrared photodetector technology
2007 T Paul Chow For contributions to smart power semiconductor devices
2007 Charvaka Duvvury For contributions to electrostatic discharge devices and design protection methods for integrated circuit applications
2007 Philip Hochan For contributions to the development of low-cost flip-chip technology
2007 Takayuki Kawahara For contributions to low-voltage low-power random access memory circuits
2007 Bumman Kim For contributions to linear power amplifiers, gallium arsenide microwave and millimeter-wave power devices and monolithic microwave integrated circuits
2007 Tsu-jae King For applications of silicon-germanium thin films to metal oxide semiconductor transistors and microelectro mechanical systems
2007 Mitiko Miura-mattausch For contributions to nanoscale metal oxide semiconductor field effect transistor compact modeling
2007 Clark Tu-cuong Nguyen For contributions to the physics and technology of microelectromechanical systems
2007 Jayasimha Prasad For contributions to compound semiconductor heterojunction bipolar transistors
2007 For contributions to micromachined sensors, actuators, and microsystems
2007 Yan-kuin Su For contributions to optoelectronics and nanophotonics research and education
2007 John Wood For contributions to the nonlinear microwave device and behavioral modeling, and technology
2008 John Booske For contributions to vacuum electronics and microwave processing of materials
2008 Akintunde Akinwande For contributions to the development of digital self-aligned gate technology and vacuum microelectronic devices
2008 Joe Brewer For contributions to nonvolatile memory integrated circuit technology and digital signal processor architecture
2008 Carlos Diaz For contributions to deep sub-micron foundry CMOS technology
2008 Gary Fedder For contributions to integrated micro-electro-mechanical-system processes and design methodologies
2008 Michael Fu For contributions to stochastic gradient estimation and simulation optimization
2008 Paolo Gargini For leadership in the globalization and implementation of the technology roadmap for semiconductors
2008 Fernando Guarin For contributions to semiconductor materials and reliability
2008 Hiroki Hamada For contributions to red semiconductor laser diodes and polycrystalline silicon thin-film transistors
2008 Gregg Higashi For contributions to wet chemical processing of silicon
2008 Minghwei Hong For contributions to III-V semiconductor MOSFET transistors
2008 Harold Hosack For contributions to resonant tunneling and imaging devices
2008 Eishi Ibe For contributions to neutron-induced soft-error analysis for semiconductor memory devices
2008 Ming-dou Ker For contributions to electrostatic protection in integrated circuits, and performance optimization of VLSI micro-systems
2008 Rakesh Kumar For entrepreneurial leadership in the field of integrated circuits
2008 Massimo Rudan For contributions to theory and modeling of current transport in semiconductor devices
2008 Jyuo-min Shyu For leadership in the microelectronics industry
2008 Michael Simpson For contributions to nanotechnology in engineered devices and biology
2008 Hoi-jun Yoo For contributions to low-power and high-speed VLSI design
2008 Paul Kit Lai Yu For contributions to semiconductor waveguide modulators and detectors
2009 Homer Alan Mantooth For contributions to modeling of power electronic devices
2009 Yves Baeyens For contributions to the broadband and millimeter-wave circuits for optical and wireless communications
2009 Aleksander Braginski For leadership in research and development in magnetics and applied superconductivity
2009 Cor Claeys For contributions to semiconductor device physics, defect engineering, and low frequency noise characterization
2009 Vikram Dalal For contributions to thin-film photovoltaic energy conversion materials and devices
2009 Nicholas Economou For leadership in developing and commercializing focused ion beam systems
2009 Tahir Ghani For contributions to deep submicron metal oxide semiconductor transistor development for microprocessors
2009 Shoji Kawahito For contributions to sensor interfacing, sensor signal processing and multiple-level signaling
2009 Konstyantyn Lukin For contributions to research in noise and chaotic waveform radars
2009 Timothy Maloney For contributions to electrostatic discharge protection of semiconductor components
2009 Joe cpherson For contributions to reliability physics and engineering and application to integrated circuits
2009 Matthias Passlack For contributions to III-V metal–oxide–semiconductor technology
2009 Adam Skorek For contributions to electro-thermal analysis of industrial processes
2009 Robert Wallace For contributions to high-k gate dielectric materials for integrated circuits
2009 Albert Wang For contributions to design-for-reliability and system-on-chip
2009 Shan Wang For contributions to magnetic materials and device
2009 Richard Withers For development of superconductive and cryogenic radio frequency circuits for nuclear magnetic resonance probes
2009 Zhiping Yu For contributions to modeling and simulation of advanced semiconductor devices
2009 Enrico Zanoni For contributions to reliability of compound semiconductor devices
2009 John Zolper For leadership in compound semiconductor electronics
2010 Amitava Chatterjee For contributions to complementary metal oxide semiconductor device technology and on-chip electrostatic discharge protection
2010 Mario Dagenais For contributions to photon correlation, semiconductor devices, and integration technologies
2010 Long-sheng Fan For contributions to Micro Electro-Mechanical Systems
2010 Yogesh Gianchandani For contributions to silicon-based microactuators and on-chip microplasmas
2010 Masashi Horiguchi For contributions to circuit technologies for high-density low-power memories
2010 Dimitris Ioannou For contributions to reliability and characterization of silicon-on-insulator devices and materials
2010 Yusuf Leblebici For contributions to reliability and design techniques for integrated circuits and systems
2010 Patrick Lenahan For contributions to understanding of radiation damage and reliabilityof metal-oxide semiconductor devices
2010 Ching Fuh Lin For contributions to broadband semiconductor optical devices
2010 Kaizad Mistry For contributions to high performance complementary metal-oxide semiconductor technology and reliability
2010 For contributions to thin film transistor technologies
2010 Kwok Ng For contributions to the optimization of intrinsic parasitics in metal-oxide semiconductor field-effect transistor design
2010 Yasuhisa Omura For contributions of silicon on insulator devices technology, analysis, and modeling
2010 Gary Patton For contributions to silicon germanium heterojunction bipolar transistors
2010 Jin Koo Rhee For contributions to Gallium Arsenide, Microwave and Millimeter-wave Monolithic Integrated Circuits
2010 Thomas Skotnicki For contributions to development of metal-oxide semiconductor field effect transistor models and advanced semiconductor technologies
2010 Robert White For contributions to digital power management in power systems for computing and telecommunications equipment
2010 Shumpei Yamazaki For contributions to, and leadership in the industrialization of non-volatile memory and thin film transistor technologies
2010 George Zentai For contributions to the advancement of digital x-ray imagers
2011 For contributions to the understanding, development, and fabrication of silicon-based resonant interband tunneling devices and circuits
2011 Paul Davis For development of bipolar integrated circuits
2011 Asen Asenov For contributions to the understanding and prediction of semiconductor device variability via modeling and simulation
2011 Albert Chin For contributions to high-K dielectrics and metal gate electrodes for complementary metal-oxide semiconductor
2011 Jen-inn Chyi For contributions to III-V compound semiconductor optoelectronic devices
2011 For contributions to the development of nanomagnetism and spin-electronic devices, including spin valves
2011 Veronique Ferlet-cavrois For contributions to understanding of radiation effects on electronic devices
2011 Digh Hisamoto For contributions to complementary metal-oxide semiconductor devices
2011 Mark Itzler For leadership in avalanche photodiode technologies
2011 Eun Kim For contributions to microelectromechanical systems
2011 Dirk B M Klaassen For contributions to semiconductor device modeling and simulation
2011 Thomas Kuech For contributions to electronic materials growth for epitaxial devices
2011 Santosh Kurinec For leadership in integrating innovative microelectronics research in engineering education
2011 James Lu For contributions to three-dimensional integrated circuit technology
2011 Paolo Lugli For contributions to nanostructured materials and devices
2011 Chris Mack For contributions to semiconductor microlithography
2011 Vladimir Mitin For contributions to sensors and detectors
2011 Kenneth O. For contributions to ultra-high frequency complementary metal-oxide semiconductor circuits
2011 Ir Puers For contributions to implantable microelectromechanical systems
2011 Zheng Shen For contributions to the development of lateral power metal-oxide semiconductor field-effect transistors
2011 James Stathis For contributions to complementary metal-oxide semiconductor gate-oxide reliability
2011 Dennis Sylvester For contributions to energy-efficient integrated circuits
2011 Jie Xue For contributions to survivability and quality of service in computer networks
2011 Jeffrey Welser For leadership in emerging device technologies for computer applications
2012 Clifford King For contributions to silicon germanium heterojunction devices and technologies
2012 John Suehle For contributions to the understanding of thin gate dielectric films
2012 Anant Agarwal For contributions to silicon carbide power device technology
2012 For contributions to modeling and design of nanoscale integrated circuit interconnects
2012 Zeynep Celik-butler For contributions to the understanding of noise and fluctuation phenomena in solid-state devices
2012 Luigi Colombo For contributions to infrared detectors and high-k gate dielectrics
2012 J David For contributions to avalanche-photodiodes and impact ionization in semiconductors
2012 Donald Gardner For contributions to integrated circuit interconnects and integrated inductor technology
2012 Nadim Haddad For development of radiation hardened semiconductor device technology and products for space applications
2012 Wilfried Haensch For contributions to metal?oxide?semiconductor field-effect transistor device physics and scaling
2012 Francis Kub For leadership in the development of wide bandgap semiconductor power electronics
2012 Oleg Mukhanov For leadership in research and development of superconducting digital electronics
2012 Andreas Neuber For contributions to the physics of dielectric surface flashover in high electric fields
2012 Anthony Oates For contributions to the engineering and understanding of interconnect reliability in integrated circuits
2012 For contributions to silicon quantum dot devices
2012 William Palmer For leadership and contributions in microwave and millimeter wave systems and sources
2012 Ci-ling Pan For contributions to optoelectronic and liquid crystal devices for ultrafast and terahertz photonics
2012 For contributions to quantum structures for infrared and terahertz detection
2012 Valluri Rao For contributions to the characterization technologies for microprocessor and logic circuits
2012 Johnny Sin For contributions to the design and commercialization of power semiconductor devices
2012 Chris Van De Walle For contributions to the theory of interfaces, doping and defects in semiconductors
2012 For contributions to characterization and device applications of semiconductor nanostructures
2013 Arthur Morris For development and commercialization of CMOS radio frequency micro electro mechanical systems
2013 John Verboncoeur For contributions to computational plasma physics and plasma device applications
2013 Ramachandra Achar For contributions to interconnect and signal integrity analysis in high-speed designs
2013 Robert Aitken For contributions to testing and diagnosis of integrated circuits
2013 Carter Armstrong For technical leadership in the development of high power microwave and millimeter-wave radiation sources, especially their power modules
2013 David Cumming For contributions to integrated sensors and microsystem technology
2013 For contributions to high-performance advanced silicon and compound semiconductor transistor technologies
2013 Takatomo EnokiFor contributions to compound semiconductor high speed integrated circuits for optical and wireless communication systems[2]
2013 Kenneth Hansen For technical leadership in wireless communications
2013 Ravi Mahajan For contributions to electronic packaging technology and thermal management of microprocessors
2013 Cian Mathuna For leadership in the development of power supply using micromagnetics on silicon
2013 Carlos Mazure For leadership in the field of silicon on insulator and memory technologies
2013 Gaudenzio Meneghesso For contributions to the reliability physics of compound semiconductors devices
2013 Subhasish Mitra For contributions to design and test of robust integrated circuits
2013 Masaaki Niwa For contributions to CMOS technology using high dielectric constant materials and metal gate
2013 David Perreault For contributions to design and application of very high frequency power electronic converters
2013 John Robertson For contributions to the understanding of high-k dielectrics and metal gate electrodes for CMOS technology
2013 John Spargo For leadership in superconducting electronics and related technologies
2013 R P Thakur For leadership in development and implementation of single-wafer technology in semiconductor manufacturing
2013 Thomas Theis For leadership in the development of semiconductor technologies
2013 Chen-hua Yu For leadership in development of interconnect technology for integrated circuits
2014 Richard Brown For contributions to microsystem design
2014 For contributions to flash memory technologies
2014 Babu Chalamala For contributions to the development of advanced materials and device technologies for vacuum microelectronics and field emission displays
2014 Shoou-jinn Chang For contributions to nano scale photonic, electronic, and sensing devices
2014 For contributions to compound semiconductor heterojunction transistor technologies
2014 Donald Disney For contributions to power integrated circuits and energy efficiency applications
2014 Ichiro Fujimori For contributions to oversampled data converters and gigabit wireline transceivers
2014 Kazunari Ishimaru For contributions to static random access memory and complementary metal-oxide semiconductor devices
2014 For contributions to diffractive optics and three-dimensional display technologies
2014 Taiichi Otsuji For contributions to plasmonic semiconductor integrated device technology for terahertz sensing
2014 Daniel Radack For leadership in microwave and millimeter-wave integrated circuit technologies and packaging techniques
2014 Jean-pierre Raskin For contributions to the characterization of silicon-on-insulator RF MOSFETs and MEMS devices
2014 Jacobus Swart For contributions to microelectronics education in Brazil
2014 Srinivas Tadigadapa For contributions to microeletromechanical systems for fluidic and biochemical sensors
2014 Mircea Stan For contributions to power- and temperature-aware design of VLSI circuits and systems
2015 David Abe For leadership and contributions to the development of high power microwave and millimeter wave vacuum electronic devices
2015 For contributions to strained silicon transistor technology
2015 Victor Bright For contributions to micro- and nano-electromechanical systems
2015 John Conley For contributions to semiconductor process technology to improve radiation hardening of MOS devices
2015 John Dallesasse For contributions to oxidation of III-V semiconductors for photonic device manufacturing
2015 Weileun Fang For contributions to measurement methods and process technologies for micro-electro-mechanical systems
2015 Lorenzo Faraone For development of semiconductor optoelectronic materials and devices
2015 D Gupta For contributions to superconductor digital radio-frequency receivers
2015 Ray-hua Horng For contributions to high brightness light emitting diodes
2015 Giuseppe Iannaccone For contributions to modeling transport and noise processes in nanoelectronic devices
2015 Safa Kasap For contributions to photoconductive sensors for x-ray imaging
2015 For contributions to silicon carbide materials and devices
2015 Hiroshi Kondoh For contributions to microwave and millimeter wave MMIC technologies
2015 Paul Lee For contributions to the development of CMOS image sensor technology and the pinned photo-diode active pixel sensor
2015 Yong Liu For contributions in power electronics packaging
2015 Susan Lord For professional leadership and contributions to engineering education
2015 Roger Malik For contributions to heterojunction compound semiconductor materials and devices
2015 Sokrates Pantelides For contributions to point-defect dynamics in semiconductor devices
2015 Luca Selmi For research on carrier transport and reliability of semiconductor devices
2015 Mark Weichold For contributions to international development of engineering education
2015 For contributions to the development of safety and security monitoring instrumentation and measurement technologies
2016 Bruce Carlsten For contributions to high-brightness electron beams and vacuum electron devices
2016 Chorng-ping Chang For contributions to replacement gate and shallow trench isolation for CMOS technology
2016 Mukta FarooqFor contributions to 3D integration and interconnect technology
2016 Patrick Fay For contributions to compound semiconductor tunneling and high-speed device technologies
2016 Qing-an Huang For contributions to modeling and packaging of microsensors and microactuators
2016 For contributions to the development of novel devices for low power applications
2016 Alvin Joseph For contributions to silicon-germanium bipolar-CMOS and RF silicon-on-insulator technology
2016 Jong-ho Lee For contributions to development and characterization of bulk multiple-gate field effect transistors
2016 Ellis Meng For contributions to biomedical microelectromechanical systems
2016 Leonard Register For contributions to modeling of charge transport in nanoscale CMOS devices
2016 Thomas Silva For contributions to the understanding and applications of magnetization dynamics
2016 Toru Tanzawa For contributions to integrated high-voltage circuits
2016 Akira Toriumi For contributions to device physics and materials engineering for advanced CMOS technology
2017 For contributions to high frequency, high field dielectric breakdown and electrical insulation for space and aerospace power systems
2017 Edoardo Charbon For contributions to solid-state single photon avalanche detectors and their applications in imaging
2017 Wei-ting Chien For leadership in reliability management
2017 Christopher Hierold For contributions to microelectromechanical sensors and microthermoelectric energy harvesting
2017 Ru Huang For contributions to multi-gate silicon nanowire transistor technology
2017 Quanxi Jia For contributions to coated superconductors and metal-oxide thin films for electronic applications
2017 Hongrui Jiang For contributions to materials and micro-scale optical tools for medical imaging
2017 Richard King For contributions to high-performance space and terrestrial photovoltaics technology
2017 Steven Koester For contributions to group-IV electronic and photonic devices
2017 Donald Lie For contributions to high linearity and high efficiency silicon RF power amplifiers for broadband wireless applications
2017 For contributions to nanomaterials integration and directed assembly
2017 Junichi Nakamura For leadership in CMOS image sensors
2017 Borivoje Nikolic For contributions to energy-efficient design of digital and mixed-signal circuits
2017 Tomas Palacios For contributions to gallium nitride electron devices and two-dimensional materials
2017 Andrei Vladimirescu For contributions to the development and commercial adoption of SPICE circuit simulation
2017 Sorin Voinigescu For contributions to silicon and silicon-germanium microwave and millimeter-wave devices and integrated circuits
2017 Xin Zhang For contributions to microelectromechanical systems
2018 Pamela Ann Abshire For contributions to CMOS biosensors
2018 Timothy Boykin For contributions to atomistic models for semiconductor device simulation
2018 Kuan-neng Chen For contributions to 3D integrated circuit and packaging technologies
2018 Michel Houssa For contributions to materials characterization for advanced MOSFETs
2018 Jaroslav Hynecek For contributions to solid-state image sensors
2018 Michael Krames For leadership in GaN-based light-emitting device physics and its commercialization
2018 Isaac Lagnado For leadership in the development of silicon-on-sapphire technology
2018 Chee Wee Liu For contributions to high-mobility Ge and SiGe MOSFETs
2018 Wei Lu For contributions to development of neuromorphic systems
2018 Zhenqiang Ma For contributions to flexible and biodegradable microwave electronics
2018 Saibal Mukhopadhyay For contributions to energy-efficient and robust computing systems design
2018 Hidetoshi Onodera For contributions to variation-aware design and analysis of integrated circuits
2018 Philippe Paillet For contributions to the understanding of radiation effects in electronics
2018 Joseph Pawlowski For contributions to memory system interfaces
2018 Seiji Samukawa For contributions to damage-free plasma processing for nano-device manufacturing
2018 Gregory Snider For contributions to single electron based computing technology
2018 Shuji Tanaka For contributions to micro-electromechanical systems for acoustic wave devices, physical sensors, and power generation
2018 Victor Veliadis For contributions to development of SiC power devices
2018 Robert Weikle For contributions to millimeter-wave and submillimeter-wave electronics and instrumentation for terahertz frequencies
2018 Huikai Xie For contributions to micro-electromechanical optical scanning systems
2018 Jianbin Xu For contributions to nanoscale electronic materials and devices
2018 Anthony Yen For leadership in extreme-ultraviolet lithography for high volume manufacture of integrated circuits
2019 Matthias Bauer For contributions to growth technologies for alloys for transistors
2019 Meng-fan Chang For contributions to static and nonvolatile memories for embedded systems
2019 Kin Ping Cheung For contributions to plasma process-induced damage in integrated circuits
2019 Hiroshi Ito For contributions to high-speed photodiodes for millimeter and terahertz wave generation
2019 Christoph Jungemann For contributions to hierarchical simulation of semiconductor devices
2019 Ali Khakifirooz For contributions to fully depleted silicon-on-insulator complementary-metal-oxide-semiconductor technology
2019 Chih-huang Lai For contributions to magnetic information storage and spintronic devices
2019 Roger Lake For contributions to quantum mechanical electronic device modeling
2019 Miroslav MicovicFor contributions to gallium nitride electronics
2019 Theodore Moise For contributions to ferroelectric memory development and engineering
2019 Katsu Nakamura For contributions to integrated circuits for digital imaging
2019 Stewart Rauch For contributions to microelectronics reliability
2019 Samar Saha For contributions to compact modeling of silicon field-effect transistors
2019 Sayeef Salahuddin For contributions to low power electronic and spintronic devices
2019 Venkat Selvamanickam For contributions to development and manufacturing of superconductor tapes
2019 Munehiro Tada For contributions to copper interconnects for very-large-scale integration
2019 Harkhoe Tan For contributions to compound semiconductor optoelectronic materials and devices
2019 Deepak Uttamchandani For contributions to photonics-based sensing
2020 Geoffrey W. Burr For contributions to neuromorphic computing using non-volatile memories
2020 Ting-chang Chang For contributions to non-volatile memory and thin-film transistor technologies
2020 Pr Chidambaram For contributions to strain engineering in MOSFETs and to designtechnology co-optimization
2020 Chion Chui For contributions to high-mobility germanium metal-oxidesemiconductor devices

See also

Notes and References

  1. Web site: IEEE Fellows Directory.
  2. Web site: IEEE Tokyo Section Fellows . 2022-03-22 . www.ieee-jp.org.