Light-emitting transistor explained

Light-emitting transistor (LET)
Working Principle:	Electroluminescence
Invented:	Milton Feng Nick Holonyak

A light-emitting transistor or LET is a form of transistor that emits light. Higher efficiency than light-emitting diode (LED) is possible.

History

Reported in the January 5, 2004 issue of the journal Applied Physics Letters, Milton Feng and Nick Holonyak,^[1] the inventor of the first practical light-emitting diode (LED) and the first semiconductor laser to operate in the visible spectrum, made the world's first light-emitting transistor. This hybrid device, fabricated by Feng's graduate student Walid Hafez, had one electrical input and two outputs (electrical output and optical output) and operated at a frequency of 1 MHz. The device was made of indium gallium phosphide, indium gallium arsenide, and gallium arsenide, and emitted infrared photons from the base layer.^{[2] [3]}

See also

• Organic light-emitting transistor

Notes and References

1. Light-emitting transistor: Light emission from InGaP/GaAs heterojunction bipolar transistors . 10.1063/1.1637950 . 2004 . Feng . M. . Holonyak . N. . Hafez . W. . Applied Physics Letters . 84 . 1 . 151–153 . 2004ApPhL..84..151F . free .
2. Web site: First Light-Emitting Transistor . IEEE Spectrum .
3. https://illinois.edu/blog/view/6367/207740 New light-emitting transistor could revolutionize electronics industry