Kröger–Vink notation is a set of conventions that are used to describe electric charges and lattice positions of point defect species in crystals. It is primarily used for ionic crystals and is particularly useful for describing various defect reactions. It was proposed by and .[1] [2]
The notation follows the scheme:
M
When using Kröger–Vink notation for both intrinsic and extrinsic defects, it is imperative to keep all masses, sites, and charges balanced in each reaction. If any piece is unbalanced, the reactants and the products do not equal the same entity and therefore all quantities are not conserved as they should be. The first step in this process is determining the correct type of defect and reaction that comes along with it; Schottky and Frenkel defects begin with a null reactant (∅) and produce either cation and anion vacancies (Schottky) or cation/anion vacancies and interstitials (Frenkel). Otherwise, a compound is broken down into its respective cation and anion parts for the process to begin on each lattice. From here, depending on the required steps for the desired outcome, several possibilities occur. For example, the defect may result in an ion on its own ion site or a vacancy on the cation site. To complete the reactions, the proper number of each ion must be present (mass balance), an equal number of sites must exist (site balance), and the sums of the charges of the reactants and products must also be equal (charge balance).
Schottky defect formation in TiO2.
Schottky defect formation in BaTiO3.
Frenkel defect formation in MgO.
Schottky defect formation in MgO.
Assume that the cation C has +1 charge and anion A has −1 charge.
∅ v + v v + v
∅ e + h
∅ v + C v + M (cationic Frenkel defect)
∅ v + A v + X (anionic Frenkel defect)
M + e → M (metal site reduced)
B → B + e (metal site oxidized, where B is an arbitrary cation having one more positive charge than the original atom on the site)
The following oxidation–reduction tree for a simple ionic compound, AX, where A is a cation and X is an anion, summarizes the various ways in which intrinsic defects can form. Depending on the cation-to-anion ratio, the species can either be reduced and therefore classified as n-type, or if the converse is true, the ionic species is classified as p-type. Below, the tree is shown for a further explanation of the pathways and results of each breakdown of the substance.
From the chart above, there are total of four possible chemical reactions using Kröger–Vink Notation depending on the intrinsic deficiency of atoms within the material. Assume the chemical composition is AX, with A being the cation and X being the anion. (The following assumes that X is a diatomic gas such as oxygen and therefore cation A has a +2 charge. Note that materials with this defect structure are often used in oxygen sensors.)
A + X A + X2(g) + 2 e
A(s) A + v + 2 e
X2(g) v + X + 2 h
A + X A(s) + X + 2 h
Using the law of mass action, a defect's concentration can be related to its Gibbs free energy of formation, and the energy terms (enthalpy of formation) can be calculated given the defect concentration or vice versa.
For a Schottky reaction in MgO, the Kröger–Vink defect reaction can be written as follows:
Note that the vacancy on the Mg sublattice site has a −2 effective charge, and the vacancy on the oxygen sublattice site has a +2 effective charge. Using the law of mass action, the reaction equilibrium constant can be written as (square brackets indicating concentration):
Based on the above reaction, the stoichiometric relation is as follows:
Also, the equilibrium constant can be related to the Gibbs free energy of formation ΔfG according to the following relations,
Relating equations and, we get:
exp− = [v{{su|p={{tmath|\prime\prime}}|b=Mg}}]2
Using equation, the formula can be simplified into the following form where the enthalpy of formation can be directly calculated:
[v{{su|p={{tmath|\prime\prime}}|b=Mg}}] = exp− + = A exp−, where A is a constant containing the entropic term.
Therefore, given a temperature and the formation energy of Schottky defect, the intrinsic Schottky defect concentration can be calculated from the above equation.