Jerry G. Fossum Explained

Jerry G. Fossum
Birth Place:	Phoenix, Arizona, U.S.
Birth Date:	July 18, 1943
Education:	University of Arizona (BS, MS, PhD)
Workplaces:	Sandia National Laboratories University of Florida
Discipline:	Electrical engineering
Sub Discipline:	Semiconductor device theory Semiconductor device modeling Integrated circuit design

Jerry G. Fossum (born July 18, 1943) is an American electrical engineer who is a Distinguished Professor Emeritus at the University of Florida College of Engineering.

Early life and education

Fossum is a native of Phoenix, Arizona. He earned a Bachelor of Science, Master of Science, and PhD in electrical engineering from the University of Arizona.

Career

Fossum worked for Sandia National Laboratories before joining the University of Florida faculty in 1978. In 1983, he was elected a fellow of the IEEE.^[1] Fossum received the J. J. Ebers Award in 2004.^[2] His scholarship focuses on the semiconductor device theory, modeling, and design.^[3]

Notes and References

1. Huang . Ya-Chi . Chiang . Meng-Hsueh . Wang . Shui-Jinn . Fossum . Jerry G. . GAAFET Versus Pragmatic FinFET at the 5nm Si-Based CMOS Technology Node . IEEE Journal of the Electron Devices Society . March 2017 . 5 . 3 . 164–169 . 10.1109/JEDS.2017.2689738. free .
2. News: EDS Honors SOI Pioneer . 22 February 2022 . SOI Industry Consortium . 18 April 2005.
3. Web site: Jerry G. Fossum Speaker Profile . cmu.edu.