Jane P. Chang | |
Work Institution: | University of California Los Angeles (UCLA) |
Alma Mater: | National Taiwan University (BS) Massachusetts Institute of Technology (MS, PhD) |
Field: | Electrochemistry Chemical engineering |
Thesis Title: | Study of plasma-surface kinetics and simulation of feature profile evolution in chlorine etching of patterned polysilicon |
Thesis Url: | https://search.worldcat.org/title/39171343 |
Thesis Year: | 1998 |
Doctoral Advisor: | Herbert H. Sawin |
Jane Pei-chen Chang (born 1967) is a Taiwanese-American chemical engineer and materials scientist known for her research developing advanced atomic layer deposition (ALD) and etching techniques. Her research focuses on creating thin films and coatings with precise properties for use in microelectronics, energy devices, and other advanced materials applications.
Chang earned her B.S. in chemical engineering from National Taiwan University in 1993. She completed her and M.S. and Ph.D. chemical engineering degrees from Massachusetts Institute of Technology in 1995 and 1998, respectively.[1]
She is the William F. Seyer Chair and Professor of Chemical and Biomolecular Engineering at the UCLA. Her research centers on the synthesis and chemical processing of novel materials with a focus on atomic layer-controlled thin-film deposition and the atomistic understanding of solid-state interfaces.[2] Her lab studies plasma chemistry and surface interactions, which have contributed to advances in semiconductor processing, optoelectronic devices, and nanostructured materials. This includes efforts to develop high-κ dielectric, oxide-based films, e.g. HfO2, HfSiO4, ZrO2, for electronic devices and explore sustainable approaches to improve catalyst longevity in chemical processing.[3] [4] [5] These efforts have applications in electronics, microsensors, optoelectronics, solar cells, batteries, and energy storage devices.[6] [7]
Chang was the first woman to receive the AVS Plasma Prize (2018), which is the highest honor of the AVS Plasma Science & Technology Division.[8]
See references [3] [4] [5] and: