J. J. Ebers Award Explained

The J. J. Ebers Award was established in 1971 to foster progress in electron devices. It commemorates Jewell James Ebers, whose contributions, particularly to transistors, shaped the understanding and technology of electron devices. It is presented annually to one or more individuals who have made either a single or a series of contributions of recognized scientific, economic, or social significance in the broad field of electron devices. The recipient (or recipients) is awarded a certificate and check for $5,000, presented at the International Electron Devices Meeting.

Recipients

The past recipients are:

See also

References

Notes
  • Sources
  • Notes and References

    1. Web site: Past J.J. Ebers Award Winners . . . 16 September 2019.
    2. Web site: IGNIS founder Arokia Nathan wins the 2020 IEEE EDS J.J. Ebers Award . IGNIS . October 16, 2020.
    3. Web site: Conduction Threshold in Accumulation-Mode InGaZnO Thin Film Transistors . . 2016.
    4. Portilla, L., Loganathan, K., Faber, H. et al. Wirelessly powered large-area electronics for the Internet of Things. Nat Electron 6, 10–17 (2023)