Indium(II) selenide explained

Indium(II) selenide (InSe) is an inorganic compound composed of indium and selenium. It is a III-VI layered semiconductor. The solid has a structure consisting of two-dimensional layers bonded together only by van der Waals forces. Each layer has the atoms in the order Se-In-In-Se.[1]

Potential applications are for field effect transistors, optoelectronics, photovoltaic, non-linear optics, strain gauges,[1] and methanol gas sensors.[2]

Formation

Indium(II) selenide can be formed via a number of different methods. A method to make the bulk solid is the Bridgman/Stockbarger method, in which the elements indium and selenium are heated to over 900 °C in a sealed capsule, and then slowly cooled over about a month.[3] Another method is electrodeposition from a water solution of indium(I) sulfate and selenium dioxide.[4]

Properties

There are three polytopes or crystal forms. β, ε are hexagonal with unit cells spanning two layers. γ has rhombohedral crystal system, with the unit cell including four layers.[1]

β-Indium(II) selenide can be exfoliated into two-dimensional sheets using sticky tape. In a vacuum these form smooth layers. However, when exposed to air, the layers become corrugated because of chemisorption of air molecules.[5] Exfoliation can also take place in isopropanol liquid.[6]

Indium (II) selenide is stable in ambient conditions of oxygen and water vapour, unlike many other semiconductors.[1]

polytopespace groupunit cellband gapeV
βP63/mmc a=4.005 c=16.660 Z=4direct1.28
γR3m a=7.1286 Å, c=19.382 Å and Z=6 direct1.29
εPm2 indirect1.4

Doping

The properties of indium(II) selenide can be varied by way of altering the exact ratio of elements from 1:1, creating vacancies. It is hard to get an exact equality. The properties can be compensated by transition element doping. Other elements that can be included in small concentrations are boron,[7] silver,[8] and cadmium.[9]

Notes and References

  1. Politano . A. . Campi . D. . Cattelan . M. . Ben Amara . I. . Jaziri . S. . Mazzotti . A. . Barinov . A. . Gürbulak . B. . Duman . S. . Agnoli . S. . Caputi . L. S. . Granozzi . G. . Cupolillo . A. . Indium selenide: an insight into electronic band structure and surface excitations . Scientific Reports . December 2017 . 7 . 1 . 3445 . 10.1038/s41598-017-03186-x. 28611385 . 2017NatSR...7.3445P . free . 5469805 .
  2. Marvan . Petr . Mazánek . Vlastimil . Sofer . Zdeněk . Shear-force exfoliation of indium and gallium chalcogenides for selective gas sensing applications . Nanoscale . 2019 . 11 . 10 . 4310–4317 . 10.1039/C8NR09294J. 30788468 . 206138673 .
  3. Boukhvalov . Danil . Gürbulak . Bekir . Duman . Songül . Wang . Lin . Politano . Antonio . Caputi . Lorenzo . Chiarello . Gennaro . Cupolillo . Anna . The Advent of Indium Selenide: Synthesis, Electronic Properties, Ambient Stability and Applications . Nanomaterials . 5 November 2017 . 7 . 11 . 372 . 10.3390/nano7110372. 29113090 . 5707589 . free .
  4. Demir . Kübra Çınar . Demir . Emre . Yüksel . Seniye . Coşkun . Cevdet . Influence of deposition conditions on nanostructured InSe thin films . Current Applied Physics . December 2019 . 19 . 12 . 1404–1413 . 10.1016/j.cap.2019.09.008. 2019CAP....19.1404D . 203143299 .
  5. Dmitriev . A. I. . Vishnjak . V. V. . Lashkarev . G. V. . Karbovskyi . V. L. . Kovaljuk . Z. D. . Bahtinov . A. P. . Investigation of the morphology of the van der Waals surface of the InSe single crystal . Physics of the Solid State . March 2011 . 53 . 3 . 622–633 . 10.1134/S1063783411030085. 2011PhSS...53..622D . 121113583 .
  6. Petroni . Elisa . Lago . Emanuele . Bellani . Sebastiano . Boukhvalov . Danil W. . Politano . Antonio . Gürbulak . Bekir . Duman . Songül . Prato . Mirko . Gentiluomo . Silvia . Oropesa-Nuñez . Reinier . Panda . Jaya-Kumar . Toth . Peter S. . Del Rio Castillo . Antonio Esau . Pellegrini . Vittorio . Bonaccorso . Francesco . Liquid-Phase Exfoliated Indium-Selenide Flakes and Their Application in Hydrogen Evolution Reaction . Small . June 2018 . 14 . 26 . 1800749 . 10.1002/smll.201800749. 29845748 . 1903.08967 . 44172633 .
  7. Ertap . Hüseyin . Karabulut . Mevlut . Structural and electrical properties of boron doped InSe single crystals . Materials Research Express . 5 December 2018 . 6 . 3 . 035901 . 10.1088/2053-1591/aaf2f6. 105206868 .
  8. Gürbulak . Bekir . Şata . Mehmet . Dogan . Seydi . Duman . Songul . Ashkhasi . Afsoun . Keskenler . E. Fahri . Structural characterizations and optical properties of InSe and InSe:Ag semiconductors grown by Bridgman/Stockbarger technique . Physica E: Low-dimensional Systems and Nanostructures . November 2014 . 64 . 106–111 . 10.1016/j.physe.2014.07.002. 2014PhyE...64..106G .
  9. Web site: Evtodiev . Igor . Excitonic absorption of the light in heterojunctions Bi 2 O 3-InSe . 2009.

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