List of semiconductor materials explained

Semiconductor materials are nominally small band gap insulators. The defining property of a semiconductor material is that it can be compromised by doping it with impurities that alter its electronic properties in a controllable way.[1] Because of their application in the computer and photovoltaic industry—in devices such as transistors, lasers, and solar cells—the search for new semiconductor materials and the improvement of existing materials is an important field of study in materials science.

Most commonly used semiconductor materials are crystalline inorganic solids. These materials are classified according to the periodic table groups of their constituent atoms.

Different semiconductor materials differ in their properties. Thus, in comparison with silicon, compound semiconductors have both advantages and disadvantages. For example, gallium arsenide (GaAs) has six times higher electron mobility than silicon, which allows faster operation; wider band gap, which allows operation of power devices at higher temperatures, and gives lower thermal noise to low power devices at room temperature; its direct band gap gives it more favorable optoelectronic properties than the indirect band gap of silicon; it can be alloyed to ternary and quaternary compositions, with adjustable band gap width, allowing light emission at chosen wavelengths, which makes possible matching to the wavelengths most efficiently transmitted through optical fibers. GaAs can be also grown in a semi-insulating form, which is suitable as a lattice-matching insulating substrate for GaAs devices. Conversely, silicon is robust, cheap, and easy to process, whereas GaAs is brittle and expensive, and insulation layers cannot be created by just growing an oxide layer; GaAs is therefore used only where silicon is not sufficient.[2]

By alloying multiple compounds, some semiconductor materials are tunable, e.g., in band gap or lattice constant. The result is ternary, quaternary, or even quinary compositions. Ternary compositions allow adjusting the band gap within the range of the involved binary compounds; however, in case of combination of direct and indirect band gap materials there is a ratio where indirect band gap prevails, limiting the range usable for optoelectronics; e.g. AlGaAs LEDs are limited to 660 nm by this. Lattice constants of the compounds also tend to be different, and the lattice mismatch against the substrate, dependent on the mixing ratio, causes defects in amounts dependent on the mismatch magnitude; this influences the ratio of achievable radiative/nonradiative recombinations and determines the luminous efficiency of the device. Quaternary and higher compositions allow adjusting simultaneously the band gap and the lattice constant, allowing increasing radiant efficiency at wider range of wavelengths; for example AlGaInP is used for LEDs. Materials transparent to the generated wavelength of light are advantageous, as this allows more efficient extraction of photons from the bulk of the material. That is, in such transparent materials, light production is not limited to just the surface. Index of refraction is also composition-dependent and influences the extraction efficiency of photons from the material.[3]

Types of semiconductor materials

Compound semiconductors

A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth). The range of possible formulae is quite broad because these elements can form binary (two elements, e.g. gallium(III) arsenide (GaAs)), ternary (three elements, e.g. indium gallium arsenide (InGaAs)) and quaternary alloys (four elements) such as aluminium gallium indium phosphide (AlInGaP)) alloy and Indium arsenide antimonide phosphide (InAsSbP). The properties of III-V compound semiconductors are similar to their group IV counterparts. The higher ionicity in these compounds, and especially in the II-VI compound, tends to increase the fundamental bandgap with respect to the less ionic compounds.[4]

Fabrication

Metalorganic vapor-phase epitaxy (MOVPE) is the most popular deposition technology for the formation of compound semiconducting thin films for devices. It uses ultrapure metalorganics and/or hydrides as precursor source materials in an ambient gas such as hydrogen.

Other techniques of choice include:

Table of semiconductor materials

Group Elem. Material Formula data-sort-type=number Band gap (eV) !Gap type Description
IV 1 Si data-sort-value="1120"1.12 Used in conventional crystalline silicon (c-Si) solar cells, and in its amorphous form as amorphous silicon (a-Si) in thin-film solar cells. Most common semiconductor material in photovoltaics; dominates worldwide PV market; easy to fabricate; good electrical and mechanical properties. Forms high quality thermal oxide for insulation purposes. Most common material used in the fabrication of Integrated Circuits.
IV 1 Ge data-sort-value="670"0.67 indirect Used in early radar detection diodes and first transistors; requires lower purity than silicon. A substrate for high-efficiency multijunction photovoltaic cells. Very similar lattice constant to gallium arsenide. High-purity crystals used for gamma spectroscopy. May grow whiskers, which impair reliability of some devices.
IV 1 C data-sort-value="5470"5.47[5] indirect Excellent thermal conductivity. Superior mechanical and optical properties.High carrier mobilities[6] and high electric breakdown field[7] at room temperature as excellent electronics characteristics.Extremely high nanomechanical resonator quality factor.[8]
IV 1 Gray tin, α-Sn Sn data-sort-value="40"0[9] [10] Low temperature allotrope (diamond cubic lattice).
IV 2 SiC data-sort-value="2300"2.3[11] indirect used for early yellow LEDs
IV 2 SiC data-sort-value="3300"3.3 indirect Used for high-voltage and high-temperature applications
IV 2 SiC data-sort-value="3000"3.0 indirect used for early blue LEDs
VI 1 S8 data-sort-value="2600"2.6[12]
VI 1 Se data-sort-value="1830"1.83 - 2.0[13] [14] indirect Used in selenium rectifiers and solar cells.[15] Band gap depends on fabrication conditions.
VI 1 Se data-sort-value="2050"2.05 indirect [16]
VI 1 Te data-sort-value="330"0.33[17]
III-V 2 Boron nitride, cubic BN data-sort-value="6360"6.36[18] indirect potentially useful for ultraviolet LEDs
III-V 2 Boron nitride, hexagonal BN data-sort-value="5960"5.96 quasi-direct potentially useful for ultraviolet LEDs
III-V 2 BN data-sort-value="5500"5.5[19]
III-V 2 BP data-sort-value="2100"2.1[20] indirect
III-V 2 BAs data-sort-value="1820"1.82 direct Ultrahigh thermal conductivity for thermal management; Resistant to radiation damage, possible applications in betavoltaics.
III-V 2 B12As2 data-sort-value="3470"3.47 indirect Resistant to radiation damage, possible applications in betavoltaics.
III-V 2 AlN data-sort-value="6280"6.28 direct Piezoelectric. Not used on its own as a semiconductor; AlN-close GaAlN possibly usable for ultraviolet LEDs. Inefficient emission at 210 nm was achieved on AlN.
III-V 2 AlP data-sort-value="2450"2.45 indirect
III-V 2 AlAs data-sort-value="2160"2.16 indirect
III-V 2 AlSb data-sort-value="1600"1.6/2.2 indirect/direct
III-V 2 GaN data-sort-value="3440"3.44 direct problematic to be doped to p-type, p-doping with Mg and annealing allowed first high-efficiency blue LEDs and blue lasers. Very sensitive to ESD. Insensitive to ionizing radiation. GaN transistors can operate at higher voltages and higher temperatures than GaAs, used in microwave power amplifiers. When doped with e.g. manganese, becomes a magnetic semiconductor.
III-V 2 GaP data-sort-value="2260"2.26 indirect Used in early low to medium brightness cheap red/orange/green LEDs. Used standalone or with GaAsP. Transparent for yellow and red light, used as substrate for GaAsP red/yellow LEDs. Doped with S or Te for n-type, with Zn for p-type. Pure GaP emits green, nitrogen-doped GaP emits yellow-green, ZnO-doped GaP emits red.
III-V 2 GaAsdata-sort-value="1420"1.42 direct second most common in use after silicon, commonly used as substrate for other III-V semiconductors, e.g. InGaAs and GaInNAs. Brittle. Lower hole mobility than Si, P-type CMOS transistors unfeasible. High impurity density, difficult to fabricate small structures. Used for near-IR LEDs, fast electronics, and high-efficiency solar cells. Very similar lattice constant to germanium, can be grown on germanium substrates.
III-V 2 GaSb data-sort-value="730"0.73 direct Used for infrared detectors and LEDs and thermophotovoltaics. Doped n with Te, p with Zn.
III-V 2 InN data-sort-value="700"0.7 direct Possible use in solar cells, but p-type doping difficult. Used frequently as alloys.
III-V 2 InP data-sort-value="1350"1.35 direct Commonly used as substrate for epitaxial InGaAs. Superior electron velocity, used in high-power and high-frequency applications. Used in optoelectronics.
III-V 2 InAs data-sort-value="360"0.36 direct Used for infrared detectors for 1–3.8 μm, cooled or uncooled. High electron mobility. InAs dots in InGaAs matrix can serve as quantum dots. Quantum dots may be formed from a monolayer of InAs on InP or GaAs. Strong photo-Dember emitter, used as a terahertz radiation source.
III-V 2 InSb data-sort-value="170"0.17 direct Used in infrared detectors and thermal imaging sensors, high quantum efficiency, low stability, require cooling, used in military long-range thermal imager systems. AlInSb-InSb-AlInSb structure used as quantum well. Very high electron mobility, electron velocity and ballistic length. Transistors can operate below 0.5V and above 200 GHz. Terahertz frequencies maybe achievable.
II-VI 2 CdSe data-sort-value="1740"1.74 direct Nanoparticles used as quantum dots. Intrinsic n-type, difficult to dope p-type, but can be p-type doped with nitrogen. Possible use in optoelectronics. Tested for high-efficiency solar cells.
II-VI 2 CdS data-sort-value="2420"2.42 direct Used in photoresistors and solar cells; CdS/Cu2S was the first efficient solar cell. Used in solar cells with CdTe. Common as quantum dots. Crystals can act as solid-state lasers. Electroluminescent. When doped, can act as a phosphor.
II-VI 2 CdTe data-sort-value="1490"1.49 direct Used in solar cells with CdS. Used in thin film solar cells and other cadmium telluride photovoltaics; less efficient than crystalline silicon but cheaper. High electro-optic effect, used in electro-optic modulators. Fluorescent at 790 nm. Nanoparticles usable as quantum dots.
II-VI, oxide 2 ZnO data-sort-value="3370"3.37 direct Photocatalytic. Band gap is tunable from 3 to 4 eV by alloying with magnesium oxide and cadmium oxide. Intrinsic n-type, p-type doping is difficult. Heavy aluminium, indium, or gallium doping yields transparent conductive coatings; ZnO:Al is used as window coatings transparent in visible and reflective in infrared region and as conductive films in LCD displays and solar panels as a replacement of indium tin oxide. Resistant to radiation damage. Possible use in LEDs and laser diodes. Possible use in random lasers.
II-VI 2 ZnSe data-sort-value="2700"2.7 direct Used for blue lasers and LEDs. Easy to n-type doping, p-type doping is difficult but can be done with e.g. nitrogen. Common optical material in infrared optics.
II-VI 2 ZnS data-sort-value="3725"3.54/3.91 direct Band gap 3.54 eV (cubic), 3.91 (hexagonal). Can be doped both n-type and p-type. Common scintillator/phosphor when suitably doped.
II-VI 2 ZnTe data-sort-value="2300"2.3 direct Can be grown on AlSb, GaSb, InAs, and PbSe. Used in solar cells, components of microwave generators, blue LEDs and lasers. Used in electrooptics. Together with lithium niobate used to generate terahertz radiation.
I-VII 2 CuCl data-sort-value="3400"3.4[21] direct
I-VI 2 Cu2S data-sort-value="1200"1.2 indirect p-type, Cu2S/CdS was the first efficient thin film solar cell
IV-VI 2 PbSe data-sort-value="260"0.26 direct Used in infrared detectors for thermal imaging. Nanocrystals usable as quantum dots. Good high temperature thermoelectric material.
IV-VI 2 PbS data-sort-value="370"0.37[22] Mineral galena, first semiconductor in practical use, used in cat's whisker detectors; the detectors are slow due to high dielectric constant of PbS. Oldest material used in infrared detectors. At room temperature can detect SWIR, longer wavelengths require cooling.
IV-VI 2 PbTe data-sort-value="250"0.32 Low thermal conductivity, good thermoelectric material at elevated temperature for thermoelectric generators.
IV-VI 2 SnS data-sort-value="1150"1.3/1.0[23] direct/indirect Tin sulfide (SnS) is a semiconductor with direct optical band gap of 1.3 eV and absorption coefficient above 104 cm−1 for photon energies above 1.3 eV. It is a p-type semiconductor whose electrical properties can be tailored by doping and structural modification and has emerged as one of the simple, non-toxic and affordable material for thin films solar cells since a decade.
IV-VI 2 SnS2 data-sort-value="2200"2.2[24] SnS2 is widely used in gas sensing applications.
IV-VI 2 SnTe data-sort-value="180"0.18 Complex band structure.
IV-VI 3 Pb1−xSnxTe data-sort-value="145"0-0.29 Used in infrared detectors and for thermal imaging
V-VI, layered 2 Bi2Te3 data-sort-value="130"0.13 Efficient thermoelectric material near room temperature when alloyed with selenium or antimony. Narrow-gap layered semiconductor. High electrical conductivity, low thermal conductivity. Topological insulator.
II-V 2 Cd3P2 data-sort-value="500"0.5[25]
II-V 2 Cd3As2 data-sort-value="0"0 N-type intrinsic semiconductor. Very high electron mobility. Used in infrared detectors, photodetectors, dynamic thin-film pressure sensors, and magnetoresistors. Recent measurements suggest that 3D Cd3As2 is actually a zero band-gap Dirac semimetal in which electrons behave relativistically as in graphene.[26]
II-V 2 Zn3P2 data-sort-value="1500"1.5[27] direct Usually p-type.
II-V 2 ZnP2 data-sort-value="2100"2.1[28]
II-V 2 Zn3As2 data-sort-value="1000"1.0[29] The lowest direct and indirect bandgaps are within 30 meV or each other.
II-V 2 Zn3Sb2 data-sort-value="0"Used in infrared detectors and thermal imagers, transistors, and magnetoresistors.
Oxide 2 TiO2 data-sort-value="3200"3.20[30] indirect photocatalytic, n-type
Oxide 2 TiO2 data-sort-value="3000"3.0direct photocatalytic, n-type
Oxide 2 TiO2 data-sort-value="3260"3.26[31]
Oxide 2 Cu2O data-sort-value="2170"2.17[32] One of the most studied semiconductors. Many applications and effects first demonstrated with it. Formerly used in rectifier diodes, before silicon.
Oxide 2 CuO data-sort-value="1200"1.2 N-type semiconductor.[33]
Oxide 2 UO2 data-sort-value="1300"1.3 High Seebeck coefficient, resistant to high temperatures, promising thermoelectric and thermophotovoltaic applications. Formerly used in URDOX resistors, conducting at high temperature. Resistant to radiation damage.
Oxide 2 SnO2 data-sort-value="3700"3.7 Oxygen-deficient n-type semiconductor. Used in gas sensors.
Oxide 3 BaTiO3 data-sort-value="3000"3 Ferroelectric, piezoelectric. Used in some uncooled thermal imagers. Used in nonlinear optics.
Oxide 3 SrTiO3 data-sort-value="3300"3.3 Ferroelectric, piezoelectric. Used in varistors. Conductive when niobium-doped.
Oxide 3 LiNbO3 data-sort-value="4000"4 Ferroelectric, piezoelectric, shows Pockels effect. Wide uses in electrooptics and photonics.
V-VI 2 VO2 data-sort-value="700"0.7[34] stable below 67 °C
Layered 2 PbI2 data-sort-value="2400"2.4[35] PbI2 is a layered direct bandgap semiconductor with bandgap of 2.4 eV in its bulk form, whereas its 2D monolayer has an indirect bandgap of ~2.5 eV, with possibilities to tune the bandgap between 1–3 eV
Layered 2 MoS2 data-sort-value="1230"1.23 eV (2H)[36] indirect
Layered 2 GaSe data-sort-value="2100"2.1 indirect Photoconductor. Uses in nonlinear optics. Used as 2D-material. Air sensitive.[37] [38] [39]
Layered2Indium selenideInSedata-sort-value="1805"1.26-2.35 eVdirect (indirect in 2D)Air sensitive. High electrical mobility in few- and mono-layer form.
Layered 2 SnS data-sort-value="1500">1.5 eV direct
Layered 2 Bi2S3 data-sort-value="1300"1.3
Magnetic, diluted (DMS)[40] 3 GaMnAs data-sort-value="0"
Magnetic, diluted (DMS) 3 PbMnTe data-sort-value="0"
Magnetic 4 La0.7Ca0.3MnO3data-sort-value="0"colossal magnetoresistance
Magnetic 2 FeO data-sort-value="2200"2.2 [41] antiferromagnetic Band gap for iron oxide nanoparticles was found to be 2.2 eV and on doping the band gap found to be increased up to 2.5 eV
Magnetic 2 NiO data-sort-value="3800"3.6–4.0 direct[42] [43] antiferromagnetic
Magnetic 2 EuO data-sort-value="0"ferromagnetic
Magnetic 2 EuS data-sort-value="0"ferromagnetic
Magnetic 2 CrBr3 data-sort-value="0"
other 3 Copper indium selenide, CIS CuInSe2 data-sort-value="1000"1 direct
other 3 AgGaS2 data-sort-value="0"nonlinear optical properties
other 3 ZnSiP2 data-sort-value="2000"2.0
other 2 As2S3 data-sort-value="2700"2.7[44] direct semiconductive in both crystalline and glassy state
other 2 Arsenic sulfide RealgarAs4S4 data-sort-value="0"semiconductive in both crystalline and glassy state
other 2 PtSi data-sort-value="0"Used in infrared detectors for 1–5 μm. Used in infrared astronomy. High stability, low drift, used for measurements. Low quantum efficiency.
other 2 BiI3 data-sort-value="0"
other 2 HgI2 data-sort-value="0"Used in some gamma-ray and x-ray detectors and imaging systems operating at room temperature.
other 2 TlBr data-sort-value="2680"2.68[45] Used in some gamma-ray and x-ray detectors and imaging systems operating at room temperature. Used as a real-time x-ray image sensor.
other 2 Ag2S data-sort-value="900"0.9[46]
3C3N4data-sort-value="0"other 2 FeS2 data-sort-value="950"0.95[47] Mineral pyrite. Used in later cat's whisker detectors, investigated for solar cells.
other 4 Copper zinc tin sulfide, CZTS Cu2ZnSnS4 data-sort-value="1490"1.49 direct Cu2ZnSnS4 is derived from CIGS, replacing the Indium/Gallium with earth abundant Zinc/Tin.
other 4 Copper zinc antimony sulfide, CZAS Cu1.18Zn0.40Sb1.90S7.2 data-sort-value="2200"2.2[48] direct Copper zinc antimony sulfide is derived from copper antimony sulfide (CAS), a famatinite class of compound.
other 3 Copper tin sulfide, CTS Cu2SnS3 data-sort-value="910"0.91 direct Cu2SnS3 is p-type semiconductor and it can be used in thin film solar cell application.

Table of semiconductor alloy systems

The following semiconducting systems can be tuned to some extent, and represent not a single material but a class of materials.

GroupElem.Material classFormulaBand gap (eV)Gap typeDescription
Lower Upper
IV-VI 3 Pb1−xSnxTe data-sort-value="0"0 data-sort-value="290"0.29 Used in infrared detectors and for thermal imaging
IV 2 Si1−xGex data-sort-value="670"0.67 data-sort-value="1110"1.11 direct/indirect adjustable band gap, allows construction of heterojunction structures. Certain thicknesses of superlattices have direct band gap.[49]
IV 2 Si1−xSnx data-sort-value="1000"1.0 data-sort-value="1110"1.11 indirect Adjustable band gap.[50]
III-V 3 AlxGa1−xAs data-sort-value="1420"1.42 data-sort-value="2160"2.16 direct/indirect direct band gap for x<0.4 (corresponding to 1.42–1.95 eV); can be lattice-matched to GaAs substrate over entire composition range; tends to oxidize; n-doping with Si, Se, Te; p-doping with Zn, C, Be, Mg. Can be used for infrared laser diodes. Used as a barrier layer in GaAs devices to confine electrons to GaAs (see e.g. QWIP). AlGaAs with composition close to AlAs is almost transparent to sunlight. Used in GaAs/AlGaAs solar cells.
III-V 3 InxGa1−xAs data-sort-value="360"0.36 data-sort-value="1430"1.43 direct Well-developed material. Can be lattice matched to InP substrates. Use in infrared technology and thermophotovoltaics. Indium content determines charge carrier density. For x=0.015, InGaAs perfectly lattice-matches germanium; can be used in multijunction photovoltaic cells. Used in infrared sensors, avalanche photodiodes, laser diodes, optical fiber communication detectors, and short-wavelength infrared cameras.
III-V 3 InxGa1−xP data-sort-value="1350"1.35 data-sort-value="2260"2.26 direct/indirect Used for HEMT and HBT structures and high-efficiency multijunction solar cells for e.g. satellites. Ga0.5In0.5P is almost lattice-matched to GaAs, with AlGaIn used for quantum wells for red lasers.
III-V 3 AlxIn1−xAs data-sort-value="360"0.36 data-sort-value="2160"2.16 direct/indirect Buffer layer in metamorphic HEMT transistors, adjusting lattice constant between GaAs substrate and GaInAs channel. Can form layered heterostructures acting as quantum wells, in e.g. quantum cascade lasers.
III-V 3 AlxGa1−xSb data-sort-value="700"0.7 data-sort-value="1610"1.61 direct/indirect Used in HBTs, HEMTs, resonant-tunneling diodes and some niche optoelectronics. Also used as a buffer layer for InAs quantum wells.
III-V 3 AlxIn1−xSb data-sort-value="170"0.17 data-sort-value="1610"1.61 direct/indirect Used as a buffer layer in InSb-based quantum wells and other devices grown on GaAs and GaSb substrates. Also used as the active layer in some mid-infrared LEDs and photodiodes.
III-V 3 GaAsN data-sort-value="0"data-sort-value="0"
III-V 3 GaAsP data-sort-value="1430"1.43 data-sort-value="2260"2.26 direct/indirect Used in red, orange and yellow LEDs. Often grown on GaP. Can be doped with nitrogen.
III-V 3 AlAsSb data-sort-value="1610"1.61 data-sort-value="2160"2.16 indirect Used as a barrier layer in infrared photodetectors. Can be lattice matched to GaSb, InAs and InP.
III-V 3 GaAsSb data-sort-value="700"0.7 data-sort-value="1420"1.42 direct Used in HBTs and in tunnel junctions in multi-junction solar cells. GaAs0.51Sb0.49 is lattice matched to InP.
III-V 3 AlGaN data-sort-value="3440"3.44 data-sort-value="6280"6.28 direct Used in blue laser diodes, ultraviolet LEDs (down to 250 nm), and AlGaN/GaN HEMTs. Can be grown on sapphire. Used in heterojunctions with AlN and GaN.
III-V 3 AlGaP data-sort-value="2260"2.26 data-sort-value="2450"2.45 indirect Used in some green LEDs.
III-V 3 InGaN data-sort-value="2000"2 data-sort-value="3400"3.4 direct InxGa1–xN, x usually between 0.02 and 0.3 (0.02 for near-UV, 0.1 for 390 nm, 0.2 for 420 nm, 0.3 for 440 nm). Can be grown epitaxially on sapphire, SiC wafers or silicon. Used in modern blue and green LEDs, InGaN quantum wells are effective emitters from green to ultraviolet. Insensitive to radiation damage, possible use in satellite solar cells. Insensitive to defects, tolerant to lattice mismatch damage. High heat capacity.
III-V 3 InAsSb data-sort-value="170"0.17 data-sort-value="360"0.36 direct Primarily used in mid- and long-wave infrared photodetectors due to its small bandgap, which reaches a minimum of around 0.08 eV in InAs0.4Sb0.6 at room temperature.
III-V 3 InGaSb data-sort-value="170"0.17 data-sort-value="700"0.7 direct Used in some transistors and infrared photodetectors.
III-V 4 AlGaInP data-sort-value="0"data-sort-value="0"direct/indirect also InAlGaP, InGaAlP, AlInGaP; for lattice matching to GaAs substrates the In mole fraction is fixed at about 0.48, the Al/Ga ratio is adjusted to achieve band gaps between about 1.9 and 2.35 eV; direct or indirect band gaps depending on the Al/Ga/In ratios; used for waveengths between 560 and 650 nm; tends to form ordered phases during deposition, which has to be prevented
III-V 4 AlGaAsP data-sort-value="0"data-sort-value="0"
III-V 4 InGaAsP data-sort-value="0"data-sort-value="0"
III-V 4 InGaAsSb data-sort-value="0"data-sort-value="0"Use in thermophotovoltaics.
III-V 4 InAsSbP data-sort-value="0"data-sort-value="0"Use in thermophotovoltaics.
III-V 4 AlInAsP data-sort-value="0"data-sort-value="0"
III-V 4 AlGaAsN data-sort-value="0"data-sort-value="0"
III-V 4 InGaAsN data-sort-value="0"data-sort-value="0"
III-V 4 InAlAsN data-sort-value="0"data-sort-value="0"
III-V 4 GaAsSbN data-sort-value="0"data-sort-value="0"
III-V 5 GaInNAsSb data-sort-value="0"data-sort-value="0"
III-V 5 GaInAsSbP data-sort-value="0"data-sort-value="0"Can be grown on InAs, GaSb, and other substrates. Can be lattice matched by varying composition. Possibly usable for mid-infrared LEDs.
II-VI 3 Cadmium zinc telluride, CZT CdZnTe data-sort-value="1400"1.4 data-sort-value="2200"2.2 direct Efficient solid-state x-ray and gamma-ray detector, can operate at room temperature. High electro-optic coefficient. Used in solar cells. Can be used to generate and detect terahertz radiation. Can be used as a substrate for epitaxial growth of HgCdTe.
II-VI 3 HgCdTe data-sort-value="0"0 data-sort-value="1500"1.5 Known as "MerCad". Extensive use in sensitive cooled infrared imaging sensors, infrared astronomy, and infrared detectors. Alloy of mercury telluride (a semimetal, zero band gap) and CdTe. High electron mobility. The only common material capable of operating in both 3–5 μm and 12–15 μm atmospheric windows. Can be grown on CdZnTe.
II-VI 3 HgZnTe data-sort-value="0"0 data-sort-value="2250"2.25 Used in infrared detectors, infrared imaging sensors, and infrared astronomy. Better mechanical and thermal properties than HgCdTe but more difficult to control the composition. More difficult to form complex heterostructures.
II-VI 3 HgZnSe data-sort-value="0"data-sort-value="0"
II-V 4 (Zn1−xCdx)3(P1−yAsy)2[51] data-sort-value="0"0 data-sort-value="1500"1.5[52] Various applications in optoelectronics (incl. photovoltaics), electronics and thermoelectrics.[53]
other 4 Copper indium gallium selenide, CIGS Cu(In,Ga)Se2 data-sort-value="1000"1 data-sort-value="1700"1.7 direct CuInxGa1–xSe2. Polycrystalline. Used in thin film solar cells.

See also

Notes and References

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  2. Milton Ohring Reliability and failure of electronic materials and devices Academic Press, 1998,, p. 310.
  3. John Dakin, Robert G. W. Brown Handbook of optoelectronics, Volume 1, CRC Press, 2006 p. 57
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  5. Book: Springer handbook of electronic and photonic materials. 54,327. Safa O. Kasap . Peter Capper . Springer. 2006. 978-0-387-26059-4.
  6. Isberg . Jan . Hammersberg . Johan . Johansson . Erik . Wikström . Tobias . Twitchen . Daniel J. . Whitehead . Andrew J. . Coe . Steven E. . Scarsbrook . Geoffrey A. . 2002-09-06 . High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond . Science . en . 297 . 5587 . 1670–1672 . 10.1126/science.1074374 . 12215638 . 2002Sci...297.1670I . 27736134 . 0036-8075.
  7. Pierre . Volpe . High breakdown voltage Schottky diodes synthesized on p-type CVD diamond layer . Physica Status Solidi. 2010 . 207 . 9 . 2088–2092 . 10.1002/pssa.201000055 . 2010PSSAR.207.2088V . 122210971 .
  8. Y. Tao, J. M. Boss, B. A. Moores, C. L. Degen (2012). Single-Crystal Diamond Nanomechanical Resonators with Quality Factors exceeding one Million. arXiv:1212.1347
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