Hongxing Jiang Explained

Hongxing Jiang (Chinese: 江红星) is a Chinese-American physicist and engineer working in the field of wide bandgap semiconductors and photonic devices. He is an original inventor of MicroLED. In 2000, the research team led by Hongxing Jiang and Jingyu Lin (Chinese: 林景瑜) realized the operation of the first MicroLED and passive driving MicroLED microdisplay.[1] [2] [3] [4] [5] [6] In 2009, he and his colleagues at III-N Technology, Inc. and Texas Tech University patented and realized the first active driving high-resolution and video-capable microLED microdisplay in VGA format (640 x 480 pixels) via heterogeneous integration of MicroLED array with CMOS active-matrix driver [7] and the work was published in the following years.[8] [9] [10] [11] [12]

The single-chip high-voltage DC/AC LEDs via on-chip integration of mini- and MicroLED arrays developed by their team in 2002 have been widely commercialized for general solid-state lighting and automobile headlights.[13] [14] [15] [16] [17]

Under the support of DARPA-MTO’s SUVOS,[18] CMUVT,[19] DUVAP,[20] and VIGIL[21] programs, their research team has contributed to the early developments of III-nitride deep UV emitters and detectors and InGaN energy devices[22] [23] [24] in the United States. These include the development of the first deep UV picosecond time-resolved optical spectroscopy system (down to 195 nm) for characterizing ultrawide bandgap (UWBG) semiconductor materials,[25] the first prediction and confirmation that Al-rich AlGaN deep UV emitters emit light in the transverse-magnetic (TM) mode,[26] [27] the demonstration of the first UV/blue photonic crystal LED (PC-LED),[28] [29] and AlN deep UV avalanche detectors with an ultrahigh specific detectivity.[30] His team was also one of the first to determine the Mg acceptor energy level in AlN optically[31] and electrically[32] and to demonstrate the conductivity control in Al-rich AlGaN.[33] [34] [35] [36] Supported by ARPA-E, their research team has developed crystal growth technologies for producing thick epitaxial films (or quasi-bulk crystals) of hexagonal boron nitride (h-BN) UWBG semiconductor in large wafer sizes and realized h-BN thermal neutron detectors with a record high detection efficiency.[37] [38] [39] [40]

While in graduate school, Hongxing Jiang and Jingyu Lin developed the first analytical formalism based on the Newtonian gravitational force to describe the orbit of a star moving into and out of a galaxy and predicated the phenomenon of mass precession.[41] This effect has been used by astrophysicists to constrain the abundance of dark matter in the solar system and the Galactic Centre.[42] [43]

Education

He obtained PhD in physics in 1986 from Syracuse University under the guidance of Arnold Honig. He received his BS in physics in 1981 from Fudan University, China. He came to US for graduate studies through the CUSPEA program.

Career

He has been working on III-nitride wide bandgap semiconductors since 1995. Currently, he is a co-director of the Nanophotonics Center and the inaugural Edward E. Whitacre Jr. endowed chair and Horn Distinguished Professor of Electrical & Computer Engineering within the Edward E. Whitacre Jr. College of Engineering at Texas Tech University (TTU). To be designated a Horn Professor is the highest honor received by a Texas Tech faculty member.[44] In 2008, he relocated his research group to TTU from Kansas State University where he was a University Distinguished Professor of Physics.[45]

Awards

Notes and References

  1. Jiang . Hongxing . Lin . Jingyu . March 2023 . How we made the microLED . Nature Electronics . 6 . 3 . 257–257 . 10.1038/s41928-023-00940-0 . 2520-1131.
  2. Web site: Hongxing Jiang; Jingyu Lin, Sixuan Jin, and Jing Li. US patent 6410940, Micro-size LED and detector arrays for mini-displays, hyperbright light emitting diodes, lighting, and UV detector and imaging sensor applications. 2022-01-05. worldwide.espacenet.com.
  3. Jin . S. X. . Li . J. . Lin . J. Y. . Jiang . H. X. . 2000-11-13 . GaN microdisk light emitting diodes . Applied Physics Letters . 76 . 5. 631–633 . 2000ApPhL..76..631J. 10.1063/1.125841 . 0003-6951. free .
  4. Jiang. H. X.. Jin. S. X.. Li. J.. Shakya. J.. Lin. J. Y.. 2001-02-26. III-nitride blue microdisplays. Applied Physics Letters. 78. 9. 1303–1305. 10.1063/1.1351521. 2001ApPhL..78.1303J. 0003-6951.
  5. Jiang. Hongxing. Lin. Jingyu. June 2001. Advances in III-nitride micro-size light emitters. III-Vs Review. 14. 5. 32–37. 10.1016/S0961-1290(01)80261-1.
  6. Jin. S. X.. Shakya. J.. Lin. J. Y.. Jiang. H. X.. 2001-05-28. Size dependence of III-nitride microdisk light-emitting diode characteristics. Applied Physics Letters. 78. 22. 3532–3534. 10.1063/1.1376152. 2001ApPhL..78.3532J. 0003-6951. free.
  7. Web site: Jacob Day, Jing Li, Donald Lie, Zhaoyang Fan, Jingyu Lin, and Hongxing Jiang. US 9047818 CMOS IC for micro-emitter based microdisplay. 2022-01-05. worldwide.espacenet.com.
  8. Day. Jacob. Li. J.. Lie. D. Y. C.. Bradford. Charles. Lin. J. Y.. Jiang. H. X.. 2011-07-18. III-Nitride full-scale high-resolution microdisplays. Applied Physics Letters. 99. 3. 031116. 10.1063/1.3615679. 2011ApPhL..99c1116D. 0003-6951.
  9. Jingyu Lin, Jacob Day, Donald Lie, Hongxing Jiang, Jing Li and Charles Bradford. High-resolution group III nitride microdisplays. SPIE Newsroom. 14 December 2011.
  10. Lin. J. Y.. Jiang. H. X.. 2020-03-09. Development of microLED. Applied Physics Letters. 116. 10. 100502. 10.1063/1.5145201. 2020ApPhL.116j0502L. 216297255. 0003-6951.
  11. Book: Micro LEDs. 2021. Hongxiang Jiang, Jingyu Lin. 978-0-12-823063-3. Cambridge, MA. 1256450564.
  12. Jiang. H. X.. Lin. J. Y.. 2013-05-06. Nitride micro-LEDs and beyond - a decade progress review. Optics Express. 21. S3. A475-84. 10.1364/OE.21.00A475. 24104436. 2013OExpr..21A.475J. 1094-4087. free.
  13. Web site: JIANG HONGXING; LIN JINGYU; JIN SIXUAN. US patent 6,957,899, Light emitting diodes for high AC voltage operating and general lighting. 2022-01-05. worldwide.espacenet.com.
  14. Web site: Fan, Zhaoyang; Jiang, Hongxing; Lin, Jingyu. US patent 7,221,044, Heterogeneous integrated high voltage DC/AC light emitter. 2022-01-05. worldwide.espacenet.com.
  15. Web site: Fan, Zhaoyang; Jiang, Hongxing; Lin, Jingyu. US patent 7,535,028, Micro-LED based high voltage AC/DC indicator lamp.
  16. Web site: Fan, Zhaoyang; Jiang, Hongxing; Lin, Jingyu. US patent 8,272,757, Light emitting diode lamp capable of high AC/DC voltage operation.
  17. Web site: Fan, Zhaoyang; Li, Jing; Lin, Jingyu; Jiang, Hongxing. US patent 7,714,348, AC/DC light emitting diodes with integrated protection mechanism.
  18. Web site: DRAPA's SUVOS program. June 2002 .
  19. Web site: DARPA's CMUVT Program.
  20. Web site: DARPA's DUVAP program.
  21. Web site: DARPA's VIGIL program.
  22. Dahal . R. . Pantha . B. . Li . J. . Lin . J. Y. . Jiang . H. X. . 2009-02-09 . InGaN/GaN multiple quantum well solar cells with long operating wavelengths . Applied Physics Letters . 94 . 6 . 10.1063/1.3081123 . 0003-6951. 2346/22892 . free .
  23. Pantha . B. N. . Dahal . R. . Li . J. . Lin . J. Y. . Jiang . H. X. . Pomrenke . G. . 2008-01-28 . Thermoelectric properties of InxGa1−xN alloys . Applied Physics Letters . 92 . 4 . 10.1063/1.2839309 . 0003-6951. 2346/22904 . free .
  24. Aryal . K. . Pantha . B. N. . Li . J. . Lin . J. Y. . Jiang . H. X. . 2010-02-01 . Hydrogen generation by solar water splitting using p-InGaN photoelectrochemical cells . Applied Physics Letters . 96 . 5 . 10.1063/1.3304786 . 0003-6951. 2346/22876 . free .
  25. Li . J. . Nam . K. B. . Nakarmi . M. L. . Lin . J. Y. . Jiang . H. X. . 2002-10-28 . Band-edge photoluminescence of AlN epilayers . Applied Physics Letters . 81 . 18 . 3365–3367 . 10.1063/1.1518558 . 0003-6951.
  26. Nam . K. B. . Li . J. . Nakarmi . M. L. . Lin . J. Y. . Jiang . H. X. . 2004-06-21 . Unique optical properties of AlGaN alloys and related ultraviolet emitters . Applied Physics Letters . 84 . 25 . 5264–5266 . 10.1063/1.1765208 . 0003-6951. 2346/22952 . free .
  27. Li . J. . Nam . K. B. . Nakarmi . M. L. . Lin . J. Y. . Jiang . H. X. . Carrier . Pierre . Wei . Su-Huai . 2003-12-22 . Band structure and fundamental optical transitions in wurtzite AlN . Applied Physics Letters . 83 . 25 . 5163–5165 . 10.1063/1.1633965 . 0003-6951.
  28. Oder . T. N. . Shakya . J. . Lin . J. Y. . Jiang . H. X. . 2003-08-11 . III-nitride photonic crystals . Applied Physics Letters . 83 . 6 . 1231–1233 . 10.1063/1.1600839 . 0003-6951.
  29. Oder . T. N. . Kim . K. H. . Lin . J. Y. . Jiang . H. X. . 2004-01-26 . III-nitride blue and ultraviolet photonic crystal light emitting diodes . Applied Physics Letters . 84 . 4 . 466–468 . 10.1063/1.1644050 . 0003-6951. 2346/22956 . free .
  30. Dahal . R. . Al Tahtamouni . T. M. . Fan . Z. Y. . Lin . J. Y. . Jiang . H. X. . 2007-06-25 . Hybrid AlN–SiC deep ultraviolet Schottky barrier photodetectors . Applied Physics Letters . 90 . 26 . 10.1063/1.2752126 . 0003-6951. 2346/22912 . free .
  31. Nam . K. B. . Nakarmi . M. L. . Li . J. . Lin . J. Y. . Jiang . H. X. . 2003-08-04 . Mg acceptor level in AlN probed by deep ultraviolet photoluminescence . Applied Physics Letters . 83 . 5 . 878–880 . 10.1063/1.1594833 . 0003-6951.
  32. Nakarmi . M. L. . Nepal . N. . Ugolini . C. . Altahtamouni . T. M. . Lin . J. Y. . Jiang . H. X. . 2006-10-09 . Correlation between optical and electrical properties of Mg-doped AlN epilayers . Applied Physics Letters . 89 . 15 . 10.1063/1.2362582 . 0003-6951. 2346/22919 . free .
  33. Zhu . K. . Nakarmi . M. L. . Kim . K. H. . Lin . J. Y. . Jiang . H. X. . 2004-11-15 . Silicon doping dependence of highly conductive n-type Al0.7Ga0.3N . Applied Physics Letters . 85 . 20 . 4669–4671 . 10.1063/1.1825055 . 0003-6951. 2346/22943 . free .
  34. Nakarmi . M. L. . Kim . K. H. . Zhu . K. . Lin . J. Y. . Jiang . H. X. . 2004-10-25 . Transport properties of highly conductive n-type Al-rich AlxGa1−xN(x⩾0.7) . Applied Physics Letters . 85 . 17 . 3769–3771 . 10.1063/1.1809272 . 0003-6951. 2346/22947 . free .
  35. Nakarmi . M. L. . Kim . K. H. . Khizar . M. . Fan . Z. Y. . Lin . J. Y. . Jiang . H. X. . 2005-02-25 . Electrical and optical properties of Mg-doped Al0.7Ga0.3N alloys . Applied Physics Letters . 86 . 9 . 10.1063/1.1879098 . 0003-6951.
  36. Web site: Jiang . Hongxing . Google Scholar citation .
  37. Maity. A.. Grenadier. S. J.. Li. J.. Lin. J. Y.. Jiang. H. X.. 2017-07-17. Toward achieving flexible and high sensitivity hexagonal boron nitride neutron detectors. Applied Physics Letters. 111. 3. 033507. 10.1063/1.4995399. 2017ApPhL.111c3507M. 1416871. 0003-6951.
  38. Maity. A.. Grenadier. S. J.. Li. J.. Lin. J. Y.. Jiang. H. X.. 2018-01-28. Hexagonal boron nitride neutron detectors with high detection efficiencies. Journal of Applied Physics. 123. 4. 044501. 10.1063/1.5017979. 2018JAP...123d4501M. 1418973. 0021-8979. free.
  39. Maity . A. . Grenadier . S. J. . Li . J. . Lin . J. Y. . Jiang . H. X. . 2020-04-06 . High efficiency hexagonal boron nitride neutron detectors with 1 cm2 detection areas . Applied Physics Letters . 116 . 14 . 142102 . 10.1063/1.5143808 . 2020ApPhL.116n2102M . 1799127 . 215735172 . 0003-6951. free .
  40. Alemoush . Z. . Tingsuwatit . A. . Maity . A. . Li . J. . Lin . J. Y. . Jiang . H. X. . 2024-05-07 . Status of h-BN quasi-bulk crystals and high efficiency neutron detectors . Journal of Applied Physics . 135 . 17 . 10.1063/5.0179610 . 0021-8979. free .
  41. Jiang . H. X. . Lin . J. Y. . 1985-07-01 . Precession of Kepler's orbit . American Journal of Physics . 53 . 7 . 694–695 . 10.1119/1.14287 . 1985AmJPh..53..694J . 0002-9505.
  42. Book: Eckart, Andreas . The black hole at the center of the Milky Way . 2005 . Imperial College Press . Rainer Schödel, Christian Michael Straubmeier . 1-86094-739-5 . London . 568009152.
  43. T. Harada, T. Igata, H. Saida, and Y. Takamori, "General formulae for the periapsis shift of a quasi-circular orbit in static spherically symmetric spacetimes and the active gravitational mass density," International Journal of Modern Physics D 32, 2350098 (2023). https://doi.org/10.1142/S0218271823500980https://arxiv.org/abs/2210.07516
  44. Web site: Texas Tech University Horn Professors .
  45. Web site: Jiang. Hongxing. Texas Tech University Electrical & Computer Engineering.
  46. News: December 9, 2021. MicroLED Inventor Receives Prestigious International Award. Texas Tech Today.
  47. News: December 6, 2021 . The Award Ceremony of ISA "Global SSL Award of Outstanding Achievement" (AOA) 2021 was held on Dec. 6, 2021 .
  48. News: December 6, 2021. 国际半导体照明联盟（ISA）举行 2021年"全球半导体照明突出贡献奖"（AOA ）颁奖典礼.
  49. News: Jiang . Hongxing . December 11, 2018 . Texas Tech Electrical and Computer Engineering Professor Named NAI Fellow . Newswise.com .
  50. Web site: NAI Fellows List. National Academy of Inventors.
  51. Web site: AAAS Elected Fellows . 2022-03-05 .
  52. Web site: Hongxing Jiang . 2022-03-05 . spie.org.
  53. News: Jiang . Hongxing . December 11, 2013 . 71 Optical Society Members Achieve the Rank of Fellow .
  54. Web site: OPTICA formerly OSA Fellow Members .
  55. Web site: APS Fellow Archive. APS org.

This article is licensed under the GNU Free Documentation License. It uses material from the Wikipedia article "Hongxing Jiang".

Except where otherwise indicated, Everything.Explained.Today is © Copyright 2009-2024, A B Cryer, All Rights Reserved. Cookie policy.