Hafnium disulfide explained
Hafnium disulfide is an inorganic compound of hafnium and sulfur. It is a layered dichalcogenide with the chemical formula is HfS2. A few atomic layers of this material can be exfoliated using the standard Scotch Tape technique (see graphene) and used for the fabrication of a field-effect transistor.[1] High-yield synthesis of HfS2 has also been demonstrated using liquid phase exfoliation, resulting in the production of stable few-layer HfS2 flakes.[2] Hafnium disulfide powder can be produced by reacting hydrogen sulfide and hafnium oxides at 500–1300 °C.[3]
Notes and References
- 10.1038/srep22277. Few-layer HfS2 transistors. Scientific Reports. 6. 22277. 2016. Kanazawa. Toru. Amemiya. Tomohiro. Ishikawa. Atsushi. Upadhyaya. Vikrant. Tsuruta. Kenji. Tanaka. Takuo. Miyamoto. Yasuyuki. 26926098. 4772098. 2016NatSR...622277K.
- Kaur. Harneet. High Yield Synthesis and Chemical Exfoliation of Two-Dimensional Layered Hafnium Disulphide. Nano Research. 1611.00895. 10.1007/s12274-017-1636-x. 2017. 99414438 .
- Kaminskii. B. T.. Prokof'eva. G. N.. Plygunov. A. S.. Galitskii. P. A.. 1973-07-01. Manufacture of zirconium and hafnium sulfide powders. Soviet Powder Metallurgy and Metal Ceramics. 12. 7. 521–524. 10.1007/BF00796747. 95277086 .