Generation–recombination noise explained
Generation–recombination noise, or g–r noise, is a type of electrical signal noise caused statistically by the fluctuation of the generation and recombination of electrons in semiconductor-based photon detectors.[1]
See also
Notes and References
- Smith . D. L. . 1982 . Theory of generation‐recombination noise in intrinsic photoconductors . Journal of Applied Physics . 53 . 10 . 7051–7060 . 10.1063/1.330006 . 1982JAP....53.7051S . 0021-8979.