Gallium indium antimonide explained

Gallium indium antimonide, also known as indium gallium antimonide, GaInSb, or InGaSb (Ga_xIn_1-xSb), is a ternary III-V semiconductor compound. It can be considered as an alloy between gallium antimonide and indium antimonide. The alloy can contain any ratio between gallium and indium. GaInSb refers generally to any composition of the alloy.

Preparation

GaInSb films have been grown by molecular beam epitaxy,^[1] chemical beam epitaxy^[2] and liquid phase epitaxy^[3] on gallium arsenide and gallium antimonide substrates. It is often incorporated into layered heterostructures with other III-V compounds.

Electronic Properties

The bandgap and lattice constant of GaInSb alloys are between those of pure GaSb (a = 0.610 nm, E_g = 0.73 eV) and InSb (a = 0.648 nm, E_g = 0.17 eV). Over all compositions, the bandgap is direct, like in pure GaSb and InSb.

Applications

InGaSb and InGaSb-containing heterostructures have been studied for use in near- to mid-infrared photodetectors,^{[4] [5] [6]} transistors,^{[7] [8]} and hall effect sensors.^[9]

External links

• Properties of GaInSb

Notes and References

1. ((Kodama, M.)), ((Kimata, M.)) . Journal of Crystal Growth . Molecular beam epitaxy of GaSb and InGaSb . 73 . 3 . 641–645 . 1985 . 10.1016/0022-0248(85)90031-4. 1985JCrGr..73..641K .
2. ((Kaneko, T.)), ((Asahi, H.)), ((Okuno, Y.)), ((Gonda, S.)) . Journal of Crystal Growth . MOMBE (Metalorganic Molecular Beam Epitaxy) growth of InGaSb on GaSb . 95 . 1 . 158–162 . 1989 . 10.1016/0022-0248(89)90372-2. 1989JCrGr..95..158K .
3. ((Mauk, M. G.)), ((Tata, A. N.)), ((Cox, J. A.)) . Journal of Crystal Growth . Solution growth of thick III–V antimonide alloy epilayers (InAsSb, InGaSb, InGaAsSb, AlGaAsSb, and InAsSbP) for "virtual substrates" . 225 . 2 . 236–243 . 2001 . 10.1016/S0022-0248(01)00843-0. 2001JCrGr.225..236M .
4. ((Rogalski, A.)), ((Martyniuk, P.)) . Infrared Physics & Technology . InAs/GaInSb superlattices as a promising material system for third generation infrared detectors . 48 . 1 . 39–52 . 2006 . 10.1016/j.infrared.2005.01.003. 2006InPhT..48...39R .
5. ((Li, D.)), ((Lan, C.)), ((Manikandan, A.)), ((Yip, S.)), ((Zhou, Z.)), ((Liang, X.)), ((Shu, L.)), ((Chueh, Y.-L.)), ((Han, N.)), ((Ho, J. C.)) . Nature Communications . Ultra-fast photodetectors based on high-mobility indium gallium antimonide nanowires . 10 . 1 . 1664 . Nature Publishing Group . 2019 . 10.1038/s41467-019-09606-y. 30971702 . 6458123 . 2019NatCo..10.1664L .
6. ((Refaat, T. F.)), ((Abedin, M. N.)), ((Bhagwat, V.)), ((Bhat, I. B.)), ((Dutta, P. S.)), ((Singh, U. N.)) . Applied Physics Letters . InGaSb photodetectors using an InGaSb substrate for 2μm applications . 85 . 11 . 1874–1876 . 2004 . 10.1063/1.1787893. 2004ApPhL..85.1874R .
7. ((Ho, H.-C.)), ((Gao, Z.-Y.)), ((Lin, H.-K.)), ((Chiu, P.-C.)), ((Hsin, Y.-M.)), ((Chyi, J.-I.)) . IEEE Electron Device Letters . Device Characteristics of InGaSb/AlSb High-Hole-Mobility FETs . 33 . 7 . 964–966 . 2012 . 10.1109/LED.2012.2193656. 2012IEDL...33..964H . 6254124 .
8. ((Loesch, R.)), ((Aidam, R.)), ((Kirste, L.)), ((Leuther, A.)) . Journal of Applied Physics . Molecular beam epitaxial growth of metamorphic AlInSb/GaInSb high-electron-mobility-transistor structures on GaAs substrates for low power and high frequency applications . 109 . 3 . 033706–033706–5 . 2011 . 10.1063/1.3544041. 2011JAP...109c3706L .
9. ((Partin, D. L.)), ((Heremans, J. P.)), ((Schroeder, T.)), ((Thrush, C. M.)), ((Flores-Mena, L. A.)) . IEEE Sensors Journal . Temperature stable Hall effect sensors . 6 . 1 . 106–110 . 2006 . 10.1109/JSEN.2005.860362. 2006ISenJ...6..106P . 40140622 .