Gallium(I) oxide explained

Gallium(I) oxide, digallium monoxide or gallium suboxide is an inorganic compound with the formula Ga₂O.

Production

Gallium(I) oxide can be produced by reacting gallium(III) oxide with heated gallium in vacuum:

Ga _{2} O _{3} +4 Ga\longrightarrow3 Ga _{2} O

It can also be obtained by reacting gallium with carbon dioxide in vacuum at 850 °C.^[1]

2 Ga+CO _{2} \longrightarrowGa _{2O} +CO

Gallium(I) oxide is a by-product in the production of gallium arsenide wafers:^{[2] [3]}

4 Ga+SiO _{2} \longrightarrow2 Ga _{2O} +Si

Properties

Gallium(I) oxide is a brown-black diamagnetic solid which is resistant to further oxidation in dry air. It starts decomposing upon heating at temperatures above 500 °C, and the decomposition rate depends on the atmosphere (vacuum, inert gas, air).^[4]

Notes and References

1. Book: Emeléus, H. J. and Sharpe, A. G. . 5. Advances in Inorganic Chemistry and Radiochemistry . Academic Press . 008057854-3 . 1963 . 94 .
2. Book: Siffert, Paul and Krimmel, Eberhard . Silicon: Evolution and Future of a Technology . Springer . 354040546-1 . 2004 . 439 .
3. Book: Chou, L. -J . Nanoscale One-dimensional Electronic and Photonic Devices (NODEPD) . The Electrochemical Society . 978-156677574-8 . 2007 . 47.
4. Book: Brauer, Georg . Handbuch der Präparativen Anorganischen Chemie. 3. 1975. 3-432-02328-6. 857. F. Enke .