| Bernard S. Meyerson | |
| Birth Date: | 2 June 1954 |
| Birth Place: | New York, New York |
| Occupation: | Solid state physicist |
| Awards: | J. J. Ebers Award (2000) |
Bernard S. Meyerson (born June 2, 1954) is an American solid state physicist.
Meyerson is a native of New York City, born on June 2, 1954. After graduating from the City College of New York, he completed a master's degree and doctorate at the City University of New York, and began working for IBM.[1] [2]
Meyerson was elected a fellow of the American Physical Society in 1998, "for the invention of ultra-high vacuum chemical vapor deposition and its application to low temperature silicon epitaxy, especially the fabrication of SiGe heterojunction bipolar integrated circuits for wireless telecommunications."[3] The APS awarded him the George E. Pake Prize in 2011.[2] Meyerson received the J. J. Ebers Award in 2000 from the IEEE Electron Devices Society.[4] In 2002, Meyerson became an elected member of the National Academy of Engineering.[5]