Arokia Nathan Explained

Arokia Nathan
Module:
Institutions:Shandong University

Arokia Nathan is an engineer, author and academic. He is an expert in the field of electrical engineering and digital display technology.

Education

Nathan studied at the University of Alberta, where he received his Ph.D. in Electrical Engineering in 1988.[1]

Career

Following Nathan's graduation, he spent time working at both LSI Logic Corporation and ETH Zurich in the 1990s, before he joined the University of Waterloo in 1997 to chair DALSA/Natural Sciences and Engineering Research Council following the establishment of the university's Giga-to-Nanoelectronics Centre.[2] In 2001, he was recognised by the Canadian Natural Sciences and Engineering Research Council with the E.W.R. Steacie Memorial Fellowship.[3] In 2004, he was awarded the Canada Research Chair in nano-scale flexible circuits.[4] He then moved to University College London in 2006 to take up the role of Chair of Nanotechnology at the London Centre for Nanotechnology. While at UCL, he was the recipient of the Royal Society Wolfson Research Merit Award.[5]

In 2011, Nathan was recruited by the University of Cambridge as Chair of Photonic Systems and Displays, having previously worked at University College London.[6] At Cambridge, Arokia and his team developed ultra-low power transistor electronics in 2016 and 2019, which would go on to be used in various wearables and devices using Internet of Things technology.[7] It was believed that the ultralow power transistors could operate for years, without the need for battery replacement.[8] [9] [10]

Prof. Nathan is currently in the School of Information Science and Engineering at Shandong University in Jian City, China.[11]

In 2020, he was the recipient of J. J. Ebers Award, for his work with thin-film transistor and flexible/foldable electronics integration strategies.[12] [13] [14]

Nathan's research and industry foresight has led to the creation of numerous companies, with a collective venture capital investment of over US$100 million. In 2022, he became a Fellow at the Royal Academy of Engineering.[15]

Notes and References

  1. Web site: MSE's 30th Anniversary Colloquium Series: Prof Arokia Nathan "Ultralow Power Flexible Electronics" . Nanyang Technological University.
  2. Web site: History of the Giga-to-Nanoelectronics (G2N) Centre . University of Waterloo.
  3. Web site: E.W.R. Steacie Memorial Fellowships winners . 28 June 2016 . Natural Sciences and Engineering Research Council.
  4. Book: Organic Thin Film Transistor Integration: A Hybrid Approach . John Wiley & Sons.
  5. Web site: Professor Arokia Nathan . University of Cambridge.
  6. Web site: Weaving electronics into the fabric of our physical world . . January 21, 2012.
  7. Web site: Loughran . Jack . Ultra-low-power transistor solves battery woes for wearables and IoT . 21 October 2016 . Engineering & Technology.
  8. C. Jiang, H.W. Choi, X. Cheng, H. Ma, D. Hasko, A. Nathan, “Printed subthreshold organic transistors operating at high gain and ultralow power,” Science 363 (2019) 719-723.
  9. Web site: Engineers design ultralow power transistors that could function for years without a battery . . October 20, 2016.
  10. Lee . Sungsik . Nathan . Arokia . Subthreshold Schottky-barrier thin-film transistors with ultralow power and high intrinsic gain . . October 21, 2016 . 354 . 6310 . 302–304 . 10.1126/science.aah5035 . 27846559 . 2016Sci...354..302L . 23713767 .
  11. Web site: Arokia Nathan, Professor. April 22, 2024 .
  12. Web site: IGNIS founder Arokia Nathan wins the 2020 IEEE EDS J.J. Ebers Award . IGNIS . October 16, 2020.
  13. Conduction Threshold in Accumulation-Mode InGaZnO Thin Film Transistors . . 2016. 10.1038/srep22567 . Lee . Sungsik . Nathan . Arokia . Scientific Reports . 6 . 22567 . 26932790 . 2016NatSR...622567L . 4773861 .
  14. Portilla, L., Loganathan, K., Faber, H. et al. Wirelessly powered large-area electronics for the Internet of Things. Nat Electron 6, 10–17 (2023)
  15. Web site: Professor Arokia Nathan . Royal Academy of Engineering.