List of semiconductor scale examples explained

Listed are many semiconductor scale examples for various metal–oxide–semiconductor field-effect transistor (MOSFET, or MOS transistor) semiconductor manufacturing process nodes.

Timeline of MOSFET demonstrations

See also: MOSFET and Semiconductor device fabrication.

PMOS and NMOS

Channel length! data-sort-type="number"

Oxide thickness^[1]	MOSFET logic	Researcher(s)	Organization
	20,000 nm	100 nm	PMOS	Mohamed M. Atalla, Dawon Kahng	Bell Telephone Laboratories	^[2] ^[3]
			NMOS
	10,000 nm	nm	PMOS	Mohamed M. Atalla, Dawon Kahng	Bell Telephone Laboratories	^[4]
			NMOS
	8,000 nm	150 nm	NMOS	Chih-Tang Sah, Otto Leistiko, A.S. Grove	Fairchild Semiconductor	^[5]
	5,000 nm	170 nm	PMOS
	1,000 nm		PMOS	Robert H. Dennard, Fritz H. Gaensslen, Hwa-Nien Yu	IBM T.J. Watson Research Center	^[6] ^[7] ^[8]
1973	7,500 nm		NMOS	Sohichi Suzuki	NEC	^[9] ^[10]
	6,000 nm		PMOS		Toshiba	^[11] ^[12]
	1,000 nm	nm	NMOS	Robert H. Dennard, Fritz H. Gaensslen, Hwa-Nien Yu	IBM T.J. Watson Research Center	^[13]
	500 nm
	1,500 nm	nm	NMOS	Ryoichi Hori, Hiroo Masuda, Osamu Minato	Hitachi	^[14]
	3,000 nm		NMOS		Intel	^[15]
	1,000 nm	25 nm	NMOS	William R. Hunter, L. M. Ephrath, Alice Cramer	IBM T.J. Watson Research Center	^[16]
	100 nm	5 nm	NMOS	Toshio Kobayashi, Seiji Horiguchi, K. Kiuchi	Nippon Telegraph and Telephone	^[17]
	150 nm	2.5 nm	NMOS	Toshio Kobayashi, Seiji Horiguchi, M. Miyake, M. Oda	Nippon Telegraph and Telephone	^[18]
	75 nm		NMOS	Stephen Y. Chou, Henry I. Smith, Dimitri A. Antoniadis	MIT	^[19]
	60 nm		NMOS	Stephen Y. Chou, Henry I. Smith, Dimitri A. Antoniadis	MIT	^[20]
	200 nm	3.5 nm	PMOS	Toshio Kobayashi, M. Miyake, K. Deguchi	Nippon Telegraph and Telephone	^[21]
	40 nm		NMOS	Mizuki Ono, Masanobu Saito, Takashi Yoshitomi	Toshiba	^[22]
	16 nm		PMOS	Hisao Kawaura, Toshitsugu Sakamoto, Toshio Baba	NEC	^[23]
	50 nm	1.3 nm	NMOS	Khaled Z. Ahmed, Effiong E. Ibok, Miryeong Song	Advanced Micro Devices (AMD)	^[24] ^[25]
	6 nm		PMOS	Bruce Doris, Omer Dokumaci, Meikei Ieong	IBM	^[26] ^[27] ^[28]
	3 nm		PMOS	Hitoshi Wakabayashi, Shigeharu Yamagami	NEC	^[29]
			NMOS

CMOS (single-gate)

Channel length! data-sort-type="number"

Oxide thickness	Researcher(s)	Organization
			Chih-Tang Sah, Frank Wanlass	Fairchild Semiconductor	^[30] ^[31]
1968	20,000 nm	nm		RCA Laboratories	^[32]
1970	10,000 nm	nm		RCA Laboratories
	2,000 nm		A. Aitken, R.G. Poulsen, A.T.P. MacArthur, J.J. White	Mitel Semiconductor	^[33]
	3,000 nm		Toshiaki Masuhara, Osamu Minato, Toshio Sasaki, Yoshio Sakai	Hitachi Central Research Laboratory	^[34] ^[35] ^[36]
	1,200 nm	nm	R.J.C. Chwang, M. Choi, D. Creek, S. Stern, P.H. Pelley	Intel	^[37] ^[38]
	900 nm	nm	Tsuneo Mano, J. Yamada, Junichi Inoue, S. Nakajima	Nippon Telegraph and Telephone (NTT)	^[39]
	1,000 nm	nm	G.J. Hu, Yuan Taur, Robert H. Dennard, Chung-Yu Ting	IBM T.J. Watson Research Center	^[40]
	800 nm	17 nm	T. Sumi, Tsuneo Taniguchi, Mikio Kishimoto, Hiroshige Hirano	Matsushita	^[41]
	700 nm	12 nm	Tsuneo Mano, J. Yamada, Junichi Inoue, S. Nakajima	Nippon Telegraph and Telephone (NTT)	^[42]
	500 nm	12.5 nm	Hussein I. Hanafi, Robert H. Dennard, Yuan Taur, Nadim F. Haddad	IBM T.J. Watson Research Center	^[43]
	250 nm		Naoki Kasai, Nobuhiro Endo, Hiroshi Kitajima	NEC	^[44]
	400 nm	nm	M. Inoue, H. Kotani, T. Yamada, Hiroyuki Yamauchi	Matsushita	^[45]
	100 nm		Ghavam G. Shahidi, Bijan Davari, Yuan Taur, James D. Warnock	IBM T.J. Watson Research Center	^[46]
1993	350 nm			Sony	^[47]
1996	150 nm			Mitsubishi Electric
1998	180 nm			TSMC	^[48]
	5 nm		Hitoshi Wakabayashi, Shigeharu Yamagami, Nobuyuki Ikezawa	NEC	^[49]

Multi-gate MOSFET (MuGFET)

Channel length!MuGFET type! Researcher(s)! Organization!

		DGMOS	Toshihiro Sekigawa, Yutaka Hayashi	Electrotechnical Laboratory (ETL)	^[50]
1987	2,000 nm	DGMOS	Toshihiro Sekigawa	Electrotechnical Laboratory (ETL)	^[51]
	250 nm	DGMOS	Bijan Davari, Wen-Hsing Chang, Matthew R. Wordeman, C.S. Oh	IBM T.J. Watson Research Center	^[52] ^[53]
	180 nm
		GAAFET	Fujio Masuoka, Hiroshi Takato, Kazumasa Sunouchi, N. Okabe	Toshiba	^[54] ^[55] ^[56]
	200 nm	FinFET	Digh Hisamoto, Toru Kaga, Yoshifumi Kawamoto, Eiji Takeda	Hitachi Central Research Laboratory	^[57] ^[58] ^[59]
	17 nm	FinFET	Digh Hisamoto, Chenming Hu, Tsu-Jae King Liu, Jeffrey Bokor	University of California (Berkeley)	^[60] ^[61]
2001	15 nm	FinFET	Chenming Hu, Yang-Kyu Choi, Nick Lindert, Tsu-Jae King Liu	University of California (Berkeley)	^[62]
	10 nm	FinFET	Shibly Ahmed, Scott Bell, Cyrus Tabery, Jeffrey Bokor	University of California (Berkeley)	^[63]
	3 nm	GAAFET	Hyunjin Lee, Yang-kyu Choi, Lee-Eun Yu, Seong-Wan Ryu	KAIST	^[64]

Other types of MOSFET

Channel
length
(nm)! data-sort-type="number"

Oxide thickness (nm)	MOSFET type	Researcher(s)	Organization
			TFT	Paul K. Weimer	RCA Laboratories	^[65] ^[66]
			GaAs	H. Becke, R. Hall, J. White	RCA Laboratories	^[67]
	100,000		TFT	T.P. Brody, H.E. Kunig	Westinghouse Electric	^[68] ^[69]
			FGMOS	Dawon Kahng, Simon Min Sze	Bell Telephone Laboratories	^[70]
			MNOS	H.A. Richard Wegener, A.J. Lincoln, H.C. Pao	Sperry Corporation	^[71]
			BiMOS	Hung-Chang Lin, Ramachandra R. Iyer	Westinghouse Electric	^[72] ^[73]
			BiCMOS	Hung-Chang Lin, Ramachandra R. Iyer, C.T. Ho	Westinghouse Electric	^[74]
1969			VMOS		Hitachi	^[75] ^[76]
			DMOS	Y. Tarui, Y. Hayashi, Toshihiro Sekigawa	Electrotechnical Laboratory (ETL)	^[77] ^[78]
			ISFET	Piet Bergveld	University of Twente	^[79] ^[80]
	1000		DMOS	Y. Tarui, Y. Hayashi, Toshihiro Sekigawa	Electrotechnical Laboratory (ETL)	^[81]
1977			VDMOS	John Louis Moll	HP Labs
			LDMOS		Hitachi	^[82]
			IGBT	Bantval Jayant Baliga, Margaret Lazeri	General Electric	^[83]
	2000		BiCMOS	H. Higuchi, Goro Kitsukawa, Takahide Ikeda, Y. Nishio	Hitachi	^[84]
	300			K. Deguchi, Kazuhiko Komatsu, M. Miyake, H. Namatsu	Nippon Telegraph and Telephone	^[85]
	1000		BiCMOS	H. Momose, Hideki Shibata, S. Saitoh, Jun-ichi Miyamoto	Toshiba	^[86]
	90	8.3		Han-Sheng Lee, L.C. Puzio	General Motors	^[87]
	60			Ghavam G. Shahidi, Dimitri A. Antoniadis, Henry I. Smith	MIT	^[88]
		10		Bijan Davari, Chung-Yu Ting, Kie Y. Ahn, S. Basavaiah	IBM T.J. Watson Research Center	^[89]
	800		BiCMOS	Robert H. Havemann, R. E. Eklund, Hiep V. Tran	Texas Instruments	^[90]
	30		EJ-MOSFET	Hisao Kawaura, Toshitsugu Sakamoto, Toshio Baba	NEC	^[91]
1998	32				NEC
1999	8
	8		EJ-MOSFET	Hisao Kawaura, Toshitsugu Sakamoto, Toshio Baba	NEC	^[92]

Commercial products using micro-scale MOSFETs

Products featuring 20 μm manufacturing process

• RCA's CD4000 series of integrated circuits (ICs) beginning in 1968.^[32]

Products featuring 10 μm manufacturing process

See main article: 10 μm process.

• Intel 4004, the first single-chip microprocessor CPU, launched in 1971.
• Intel 8008 CPU launched in 1972.

Products featuring 8 μm manufacturing process

• Intel 1103, an early dynamic random-access memory (DRAM) chip launched in 1970.^[93]
• MOS Technology 6502 1 MHz CPU launched in 1975.^[94]

Products featuring 6 μm manufacturing process

See main article: 6 μm process.

• Toshiba TLCS-12, a microprocessor developed for the Ford EEC (Electronic Engine Control) system in 1973.^[11]
• Intel 8080 CPU launched in 1974 was manufactured using this process.^[95]
• The Television Interface Adaptor, the custom graphics and audio chip developed for the Atari 2600 in 1977.^[96]
• MOS Technology SID, a programmable sound generator developed for the Commodore 64 in 1982.^[96]
• MOS Technology VIC-II, a video display controller developed for the Commodore 64 in 1982 (5 μm).^[96]

Products featuring 3 μm manufacturing process

See main article: 3 μm process.

• Intel 8085 CPU launched in 1976.^[97]
• Intel 8086 CPU launched in 1978.^[95]
• Intel 8088 CPU launched in 1979.
• Motorola 68000 8 MHz CPU launched in 1979 (3.5 μm).

Products featuring 1.5 μm manufacturing process

See main article: 1.5 μm process.

• NEC's 64kb SRAM memory chip in 1981.^[47]
• Intel 80286 CPU launched in 1982.
• The Amiga Advanced Graphics Architecture (initially sold in 1992) included chips such as Alice that were manufactured using a 1.5 μm CMOS process.^[98]

Products featuring 1 μm manufacturing process

See main article: 1 μm process.

• NTT's DRAM memory chips, including its 64kb chip in 1979 and 256kb chip in 1980.^[37]
• NEC's 1Mb DRAM memory chip in 1984.^[47]
• Intel 80386 CPU launched in 1985.

Products featuring 800 nm manufacturing process

See main article: 800 nm process.

• NTT's 1Mb DRAM memory chip in 1984.^[37]
• NEC and Toshiba used this process for their 4Mb DRAM memory chips in 1986.^[47]
• Hitachi, IBM, Matsushita and Mitsubishi Electric used this process for their 4Mb DRAM memory chips in 1987.^[37]
• Toshiba's 4Mb EPROM memory chip in 1987.^[47]
• Hitachi, Mitsubishi and Toshiba used this process for their 1Mb SRAM memory chips in 1987.^[47]
• Intel 486 CPU launched in 1989.
• microSPARC I launched in 1992.
• First Intel P5 Pentium CPUs at 60 MHz and 66 MHz launched in 1993.

Products featuring 600 nm manufacturing process

See main article: 600 nm process.

• Mitsubishi Electric, Toshiba and NEC introduced 16Mb DRAM memory chips manufactured with a 600nm process in 1989.^[47]
• NEC's 16Mb EPROM memory chip in 1990.^[47]
• Mitsubishi's 16Mb flash memory chip in 1991.^[47]
• Intel 80486DX4 CPU launched in 1994.
• IBM/Motorola PowerPC 601, the first PowerPC chip, was produced in 0.6 μm.
• Intel Pentium CPUs at 75 MHz, 90 MHz and 100 MHz.

Products featuring 350 nm manufacturing process

See main article: 350 nm process.

• Sony's 16Mb SRAM memory chip in 1994.^[47]
• NEC VR4300 (1995), used in the Nintendo 64 game console.
• Intel Pentium Pro (1995), Pentium (P54CS, 1995), and initial Pentium II CPUs (Klamath, 1997).
• AMD K5 (1996) and original AMD K6 (Model 6, 1997) CPUs.
• Parallax Propeller, 8 core microcontroller.^[99]

Products featuring 250 nm manufacturing process

See main article: 250 nm process.

• Hitachi's 16Mb SRAM memory chip in 1993.^[47]
• Hitachi and NEC introduced 256Mb DRAM memory chips manufactured with this process in 1993, followed by Matsushita, Mitsubishi Electric and Oki in 1994.^[47]
• NEC's 1Gb DRAM memory chip in 1995.^[47]
• Hitachi's 128Mb NAND flash memory chip in 1996.^[47]
• DEC Alpha 21264A, which was made commercially available in 1999.
• AMD K6-2 Chomper and Chomper Extended. Chomper was released on May 28, 1998.
• AMD K6-III "Sharptooth" used 250 nm.
• Mobile Pentium MMX Tillamook, released in August 1997.
• Pentium II Deschutes.
• Dreamcast console's Hitachi SH-4 CPU and PowerVR2 GPU, released in 1998.
• Pentium III Katmai.
• Initial PlayStation 2's Emotion Engine CPU.

Processors using 180 nm manufacturing technology

See main article: 180 nm process.

• Intel Coppermine E- October 1999
• Sony PlayStation 2 console's Emotion Engine and Graphics Synthesizer – March 2000^[100]
• ATI Radeon R100 and RV100 Radeon 7000 – 2000
• AMD Athlon Thunderbird – June 2000
• Intel Celeron (Willamette) – May 2002
• Motorola PowerPC 7445 and 7455 (Apollo 6) – January 2002

Processors using 130 nm manufacturing technology

See main article: 130 nm process.

• Fujitsu SPARC64 V – 2001^[101]
• Gekko by IBM and Nintendo (GameCube console) – 2001
• Motorola PowerPC 7447 and 7457 – 2002
• IBM PowerPC G5 970 – October 2002 – June 2003
• Intel Pentium III Tualatin and Coppermine – 2001-04
• Intel Celeron Tualatin-256 – 2001-10-02
• Intel Pentium M Banias – 2003-03-12
• Intel Pentium 4 Northwood- 2002-01-07
• Intel Celeron Northwood-128 – 2002-09-18
• Intel Xeon Prestonia and Gallatin – 2002-02-25
• VIA C3 – 2001
• AMD Athlon XP Thoroughbred, Thorton, and Barton
• AMD Athlon MP Thoroughbred – 2002-08-27
• AMD Athlon XP-M Thoroughbred, Barton, and Dublin
• AMD Duron Applebred – 2003-08-21
• AMD K7 Sempron Thoroughbred-B, Thorton, and Barton – 2004-07-28
• AMD K8 Sempron Paris – 2004-07-28
• AMD Athlon 64 Clawhammer and Newcastle – 2003-09-23
• AMD Opteron Sledgehammer – 2003-06-30
• Elbrus 2000 1891ВМ4Я (1891VM4YA) – 2008-04-27 http://www.mcst.ru/b_4-5.shtml
• MCST-R500S 1891BM3 – 2008-07-27 https://web.archive.org/web/20151101211823/http://www.mcst.ru/b_18-19.shtml
• Vortex 86SX – http://www.dmp.com.tw/

Commercial products using nano-scale MOSFETs

See also: Nanoelectronics and Nanocircuitry.

Chips using 90 nm manufacturing technology

See main article: 90 nm process.

• Sony–Toshiba Emotion Engine+Graphics Synthesizer (PlayStation 2) – 2003^[100]
• IBM PowerPC G5 970FX – 2004
• Elpida Memory's 90 nm DDR2 SDRAM process – 2005
• IBM PowerPC G5 970MP – 2005
• IBM PowerPC G5 970GX – 2005
• IBM Waternoose Xbox 360 Processor – 2005
• IBM–Sony–Toshiba Cell processor – 2005
• Intel Pentium 4 Prescott – 2004-02
• Intel Celeron D Prescott-256 – 2004-05
• Intel Pentium M Dothan – 2004-05
• Intel Celeron M Dothan-1024 – 2004-08
• Intel Xeon Nocona, Irwindale, Cranford, Potomac, Paxville – 2004-06
• Intel Pentium D Smithfield – 2005-05
• AMD Athlon 64 Winchester, Venice, San Diego, Orleans – 2004-10
• AMD Athlon 64 X2 Manchester, Toledo, Windsor – 2005-05
• AMD Sempron Palermo and Manila – 2004-08
• AMD Turion 64 Lancaster and Richmond – 2005-03
• AMD Turion 64 X2 Taylor and Trinidad – 2006-05
• AMD Opteron Venus, Troy, and Athens – 2005-08
• AMD Dual-core Opteron Denmark, Italy, Egypt, Santa Ana, and Santa Rosa
• VIA C7 – 2005-05
• Loongson (Godson) 2Е STLS2E02 – 2007-04
• Loongson (Godson) 2F STLS2F02 – 2008-07
• MCST-4R – 2010-12
• Elbrus-2C+ – 2011-11

Processors using 65 nm manufacturing technology

See main article: 65 nm process.

• Sony–Toshiba EE+GS (PStwo)^[102] – 2005
• Intel Pentium 4 (Cedar Mill) – 2006-01-16
• Intel Pentium D 900-series – 2006-01-16
• Intel Celeron D (Cedar Mill cores) – 2006-05-28
• Intel Core – 2006-01-05
• Intel Core 2 – 2006-07-27
• Intel Xeon (Sossaman) – 2006-03-14
• AMD Athlon 64 series (starting from Lima) – 2007-02-20
• AMD Turion 64 X2 series (starting from Tyler) – 2007-05-07
• AMD Phenom series
• IBM's Cell Processor – PlayStation 3 – 2007-11-17
• IBM's z10
• Microsoft Xbox 360 "Falcon" CPU – 2007–09
• Microsoft Xbox 360 "Opus" CPU – 2008
• Microsoft Xbox 360 "Jasper" CPU – 2008–10
• Microsoft Xbox 360 "Jasper" GPU – 2008–10
• Sun UltraSPARC T2 – 2007–10
• AMD Turion Ultra – 2008-06^[103]
• TI OMAP 3 Family^[104] – 2008-02
• VIA Nano – 2008-05
• Loongson – 2009
• NVIDIA GeForce 8800GT GPU – 2007

Processors using 45 nm technology

See main article: 45 nm process.

• Matsushita released the 45 nm Uniphier in 2007.^[105]
• Wolfdale, Yorkfield, Yorkfield XE and Penryn are Intel cores sold under the Core 2 brand.
• Intel Core i7 series processors, i5 750 (Lynnfield and Clarksfield)
• Pentium Dual-Core Wolfdale-3M are current Intel mainstream dual core sold under the Pentium brand.
• Diamondville, Pineview are current Intel cores with hyper-threading sold under the Intel Atom brand.
• AMD Deneb (Phenom II) and Shanghai (Opteron) Quad-Core Processors, Regor (Athlon II) dual core processors https://www.amd.com/us-en/0,,3715_15503,00.html?redir=45nm01, Caspian (Turion II) mobile dual core processors.
• AMD (Phenom II) "Thuban" Six-Core Processor (1055T)
• Xenon in the Xbox 360 S model.
• Sony–Toshiba Cell Broadband Engine in PlayStation 3 Slim model – September 2009.
• Samsung S5PC110, as known as Hummingbird.
• Texas Instruments OMAP 36xx.
• IBM POWER7 and z196
• Fujitsu SPARC64 VIIIfx series
• Espresso (microprocessor) Wii U CPU

Chips using 32 nm technology

See main article: 32 nm process.

• Toshiba produced commercial 32Gb NAND flash memory chips with the 32nm process in 2009.^[106]
• Intel Core i3 and i5 processors, released in January 2010^[107]
• Intel 6-core processor, codenamed Gulftown^[108]
• Intel i7-970, was released in late July 2010, priced at approximately US$900
• AMD FX Series processors, codenamed Zambezi and based on AMD's Bulldozer architecture, were released in October 2011. The technology used a 32 nm SOI process, two CPU cores per module, and up to four modules, ranging from a quad-core design costing approximately US$130 to a $280 eight-core design.
• Ambarella Inc. announced the availability of the A7L system-on-a-chip circuit for digital still cameras, providing 1080p60 high-definition video capabilities in September 2011^[109]

Chips using 24–28 nm technology

• SK Hynix announced that it could produce a 26 nm flash chip with 64 Gb capacity; Intel Corp. and Micron Technology had by then already developed the technology themselves. Announced in 2010.^[110]
• Toshiba announced that it was shipping 24 nm flash memory NAND devices on August 31, 2010.^[111]
• In 2016 MCST's 28 nm processor Elbrus-8S went for serial production.^{[112] [113]}

Chips using 22 nm technology

See main article: 22 nm process.

• Intel Core i7 and Intel Core i5 processors based on Intel's Ivy Bridge 22 nm technology for series 7 chip-sets went on sale worldwide on April 23, 2012.^[114]

Chips using 20 nm technology

• Samsung Electronics began mass production of 64Gb NAND flash memory chips using a 20 nm process in 2010.^[115]
• Nvidia Tegra X1 (Nintendo Switch and Nvidia Shield TV)

Chips using 16 nm technology

• TSMC first began 16nm FinFET chip production in 2013.^[116]
• Nvidia Tegra X1+ (later Nintendo Switch and Nvidia Shield TV models)

Chips using 14 nm technology

See main article: 14 nm process.

• Intel Core i7 and Intel Core i5 processors based on Intel's Broadwell 14 nm technology was launched in January 2015.^[117]
• AMD Ryzen processors based on AMD's Zen or Zen+ architectures and which uses 14 nm FinFET technology.^[118]

Chips using 10 nm technology

See main article: 10 nm process.

• Samsung announced that it had begun mass production of multi-level cell (MLC) flash memory chips using a 10nm process in 2013.^[119] On 17 October 2016, Samsung Electronics announced mass production of SoC chips at 10 nm.
• TSMC began commercial production of 10 nm chips in early 2016, before moving onto mass production in early 2017.^[120]
• Samsung began shipping Galaxy S8 smartphone in April 2017 using the company's 10 nm processor.^[121]
• Apple delivered second-generation iPad Pro tablets powered with TSMC-produced Apple A10X chips using the 10 nm FinFET process in June 2017.^[122]

Chips using 7 nm technology

See main article: 7 nm process.

• TSMC began risk production of 256 Mbit SRAM memory chips using a 7 nm process in April 2017.^[123]
• Samsung and TSMC began mass production of 7 nm devices in 2018.^[124]
• Apple A12 and Huawei Kirin 980 mobile processors, both released in 2018, use 7 nm chips manufactured by TSMC.^[125]
• AMD began using TSMC 7 nm starting with the Vega 20 GPU in November 2018,^[126] with Zen 2-based CPUs and APUs from July 2019,^[127] and for both PlayStation 5 ^[128] and Xbox Series X/S ^[129] consoles' APUs, released both in November 2020.

Chips using 5 nm technology

See main article: 5 nm process.

• Samsung began production of 5 nm chips (5LPE) in late 2018.^[130]
• TSMC began production of 5 nm chips (CLN5FF) in April 2019.

Chips using 3 nm technology

See main article: 3 nm process.

• TSMC have announced plans to release 3nm devices during 2021–2022.^[131]
• Samsung Electronics have begun risk production of 3 nm GAAFET transistors in June of 2022.^[132]
• Apple A17 Pro (iPhone 15 Pro)

See also

• Foundry model
• MOSFET
• Semiconductor device fabrication
• Transistor count

Notes and References

1. Web site: Angstrom . . 2019-03-02.
2. Book: Sze . Simon M. . Simon Sze . Semiconductor Devices: Physics and Technology . 2002 . . 0-471-33372-7 . 4 . 2nd .
3. Atalla . Mohamed M. . Mohamed M. Atalla . Kahng . Dawon . Dawon Kahng . Silicon–silicon dioxide field induced surface devices . IRE-AIEE Solid State Device Research Conference . . June 1960.
4. Book: Voinigescu . Sorin . High-Frequency Integrated Circuits . 2013 . . 9780521873024 . 164 .
5. Sah . Chih-Tang . Chih-Tang Sah . Leistiko . Otto . Grove . A. S. . Electron and hole mobilities in inversion layers on thermally oxidized silicon surfaces . . May 1965 . 12 . 5 . 248–254 . 10.1109/T-ED.1965.15489 . 1965ITED...12..248L .
6. Dennard . Robert H. . Robert H. Dennard . Gaensslen . Fritz H. . Yu . Hwa-Nien . Kuhn . L. . 1972 International Electron Devices Meeting . Design of micron MOS switching devices . 1972 International Electron Devices Meeting . December 1972 . 168–170 . 10.1109/IEDM.1972.249198.
7. Hori . Ryoichi . Masuda . Hiroo . Minato . Osamu . Nishimatsu . Shigeru . Sato . Kikuji . Kubo . Masaharu . Short Channel MOS-IC Based on Accurate Two Dimensional Device Design . . September 1975 . 15 . S1 . 193 . 10.7567/JJAPS.15S1.193 . 1347-4065. free .
8. Critchlow . D. L. . Recollections on MOSFET Scaling . IEEE Solid-State Circuits Society Newsletter . 2007 . 12 . 1 . 19–22 . 10.1109/N-SSC.2007.4785536 . free.
9. Web site: 1970s: Development and evolution of microprocessors . Semiconductor History Museum of Japan . 27 June 2019.
10. Web site: NEC 751 (uCOM-4) . The Antique Chip Collector's Page . 2010-06-11 . dead . https://web.archive.org/web/20110525202756/http://www.antiquetech.com/chips/NEC751.htm . 2011-05-25.
11. Web site: 1973: 12-bit engine-control microprocessor (Toshiba) . Semiconductor History Museum of Japan . 27 June 2019.
12. Book: Belzer . Jack . Holzman . Albert G. . Kent . Allen . Encyclopedia of Computer Science and Technology: Volume 10 – Linear and Matrix Algebra to Microorganisms: Computer-Assisted Identification . 1978 . . 9780824722609 . 402 .
13. Dennard . Robert H. . Robert H. Dennard . Gaensslen . F. H. . Yu . Hwa-Nien . Rideout . V. L. . Bassous . E. . LeBlanc . A. R. . Design of ion-implanted MOSFET's with very small physical dimensions . . October 1974 . 9 . 5 . 256–268 . 10.1109/JSSC.1974.1050511 . 1974IJSSC...9..256D . 10.1.1.334.2417 . 283984 .
14. Kubo . Masaharu . Hori . Ryoichi . Minato . Osamu . Sato . Kikuji . 1976 IEEE International Solid-State Circuits Conference. Digest of Technical Papers . A threshold voltage controlling circuit for short channel MOS integrated circuits . 1976 IEEE International Solid-State Circuits Conference. Digest of Technical Papers . February 1976 . XIX . 54–55 . 10.1109/ISSCC.1976.1155515. 21048622 .
15. Web site: Intel Microprocessor Quick Reference Guide. Intel. 27 June 2019.
16. Hunter . William R. . Ephrath . L. M. . Cramer . Alice . Grobman . W. D. . Osburn . C. M. . Crowder . B. L. . Luhn . H. E. . 1 /spl mu/m MOSFET VLSI technology. V. A single-level polysilicon technology using electron-beam lithography . . April 1979 . 14 . 2 . 275–281 . 10.1109/JSSC.1979.1051174. 26389509 .
17. Book: Kobayashi . Toshio . Horiguchi . Seiji . Kiuchi . K. . 1984 International Electron Devices Meeting . Deep-submicron MOSFET characteristics with 5 nm gate oxide . December 1984 . 414–417 . 10.1109/IEDM.1984.190738. 46729489 .
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19. Chou . Stephen Y. . Antoniadis . Dimitri A. . Smith . Henry I. . Observation of electron velocity overshoot in sub-100-nm-channel MOSFET's in Silicon . . December 1985 . 6 . 12 . 665–667 . 10.1109/EDL.1985.26267. 1985IEDL....6..665C. 28493431 .
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112. Web site: The Russian 28-nm processor "Elbrus-8C" will go into production in 2016. . 7 September 2020.
113. Web site: Another domestic data storage system on "Elbrus" has been created . 25 August 2020 . 7 September 2020.
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